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研究生: 鍾政龍
Chung, Cheng-Lung
論文名稱: 微波電漿化學氣相沉積法製備硼摻雜鑽石及其感測器應用
Microwave Plasma Chemical Vapor Deposition of Boron Doped Diamond and its Sensor Applications
指導教授: 曾永華
Tzeng, Yon-Hua
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 110
中文關鍵詞: 硼摻雜鑽石鑽石電極循環伏安法
外文關鍵詞: boron doped diamond, diamond electrode, cyclic voltammetry
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  • 物聯網的崛起,使得各式各樣感測器的重要性不言而喻,其中,以生醫領域的感測器而言,植入性的感測器需相當好的生物相容性,這當中,鑽石這項材料悄悄得扮演起不可抹滅的腳色,鑽石具有不易受到酸鹼腐蝕、硬度最強、導熱度最佳等優越特性,再加上鑽石具有良好的生物相容性,如果鑽石能製作成生醫領域的植入性感測器,將具有良好的可靠度及穩定性。
    生醫領域的範疇中取決於鑽石的電化學特性,而鑽石除了具有良好的生物相容性,用鑽石製備之電極或感測器具有極寬的工作電位窗和極低的背景電流,再輔以良好的物理及化學穩定性,進行硼摻雜之後,這些特性也能獲得提升,使得鑽石電極之電化學特性廣泛研究於生醫領域。
    本篇論文以微波電漿化學氣相沉積系統,調整出穩定的參數製備微米之鑽石薄膜,並且進行硼摻雜鑽石的製程,於製程結束確認其相關特性,並進行電化學中循環伏安法的量測樣品製備,在不同的電解液當中分析其電荷交換的能力和工作電位窗的表現。
    本文調配赤黃血鹽、多巴胺、尿酸、氯化鉀等不同電解溶液,置入有不同程度硼摻雜鑽石電極之樣品、未摻雜鑽石電極和鉑工作電極,使用恆電位儀分析其循環伏安法特性,觀察硼摻雜鑽石的電化學特性。

    Nowadays, Internet of things (IOT) is the most popular issue in our life. A wide range of sensors would play an important role in IOT. In the field of biotechnology, the implant sensors need very good biocompatibility and that is why diamond could be a choice to be an implant sensor. Diamond has a lot of good advantages, such as excellent hardness, good chemical stability and high thermal conductivity. Last but not least, biocompatibility is the reason why we used diamond. If diamond could be an implant sensor to detect different bio-materials, diamond may have a good reliability and stability.
    In the field of biotechnology, not only the good biocompatibility diamond has, but also the good characteristic of electrical chemistry should be discussed. Diamond has wide potential window and low background current which means diamond has good potential to detect many bio-materials. When diamond is treated by different process, such as boron doping. The performance could be better.
    In this study, we try to use microwave plasma chemical vapor deposition system to grow boron doped diamond films on silicon wafer. After the growing process, we do some test to check the characteristics of boron doped diamond. Then we used boron doped diamond to create sensor to do cyclic voltammetry (CV) test. Check the boron doped diamond’s behavior of electrical chemistry in different electrolyte. We also use sputter to grow platinum film on SiO2 and use it to do CV test. Compare the electrical chemistry behavior between boron doped diamond and Pt electrode.

    摘要 I Abstract II 誌謝 VII 目錄 VIII 表目錄 XI 圖目錄 XII 第一章 緒論 1 1.1前言 1 1.2 鑽石簡介 4 1.2.1 鑽石結構 5 1.2.2 鑽石的特性 6 1.3 研究動機 8 第二章 文獻回顧與理論基礎 9 2.1 化學氣相沉積(CVD)的原理 9 2.2 化學氣相沉積法製備鑽石薄膜原理 10 2.3 CVD成長鑽石薄膜機台種類 11 2.3.1 直流電漿化學氣相沉積系統 12 2.3.2 熱燈絲化學氣相沉積系統 12 2.3.3 微波電漿輔助化學氣相沉積系統 13 2.4 製程參數對CVD鑽石薄膜的影響 14 2.4.1 製程使用之氣體 14 2.4.2 製程溫度 19 2.4.3 製程壓力 20 2.5 CVD鑽石分類 21 2.5.1 微米鑽石 22 2.5.2 奈米鑽石 23 2.5.3 超奈米鑽石 24 2.6 硼摻雜鑽石薄膜成長機制及製程方式探討 25 2.6.1 通入硼原料的方式及種類 26 2.6.2 本實驗使用之三甲基硼酸脂特性 27 2.6.3 不同晶粒大小之鑽石薄膜參數生成之硼摻雜鑽石薄膜 28 2.7 硼摻雜鑽石薄膜的判定及特性 29 2.7.1 硼摻雜鑽石薄膜的表面形貌 29 2.7.2 硼摻雜鑽石薄膜的拉曼圖特性 30 2.7.3 硼摻雜鑽石薄膜的摻雜程度影響之電阻表現 33 2.7.4 不同程度硼摻雜鑽石薄膜之載子濃度對載子遷移率影響 34 2.8 硼摻雜鑽石薄膜的循環伏安法量測特性 34 2.8.1 不同濃度電解液 35 2.8.2 不同掃描速率 35 2.8.3 不同製程氣體流量之甲脘對氫氣比(C/H source gas mixture) 36 2.8.4 不同電解液之工作電位窗表現 38 2.9 表面氫化及氧化之硼摻雜鑽石薄膜的特性 40 2.10 循環伏安法之基本原理 40 第三章 實驗流程及儀器介紹 44 3.1 實驗流程圖 44 3.2 前置作業 45 3.2.1 基板清洗 45 3.2.2 前處理 46 3.3 製程機台 47 3.2.1微波電漿輔助化學氣相沉積系統(DiamoTek 1800型) 47 3.2.2微波電漿輔助化學氣相沉積系統(IPLAS GmbH) 49 3.4 製程過程監控設備 51 3.4.1分光光譜儀 51 3.4.2雙波長光學溫度計 53 3.5 量測分析設備 54 3.5.1 光學顯微鏡 54 3.5.2 拉曼散射光譜 56 3.5.3 掃描式電子顯微鏡 60 3.5.4 原子力顯微鏡 62 3.5.5 四點探針 64 3.5.6 霍爾量測 65 3.5.7 恆電位儀 68 3.5.8 能量散佈光譜儀 68 3.6 實驗用電解液配置 71 第四章 實驗結果與討論 70 4.1鑽石薄膜結果分析與討論 70 4.1.1 Lambda沉積超奈米鑽石薄膜製程 70 4.1.2 IPLAS沉積微米鑽石薄膜和硼摻雜鑽石薄膜製程 72 4.2硼摻雜鑽石薄膜與濺鍍之鉑電極的循環伏安法量測比較 85 4.2.1於0.1M KCl溶液中測定工作電位窗比較 86 4.2.2於赤黃血鹽之氧化還原反應比較 87 4.3不同程度硼摻雜鑽石薄膜之循環伏安法特性比較 89 4.3.1於0.1M KCl溶液量測工作電位窗 89 4.3.2於赤黃血鹽之氧化還原反應比較 90 4.3.3於0.01M PBS溶液量測工作電位窗 92 4.3.4於多巴胺和尿酸之氧化還原反應比較 92 4.4硼摻雜鑽石薄膜沉積於不同晶粒大小鑽石薄膜之比較 94 4.4.1於0.1M KCl溶液量測工作電位窗 94 4.4.2於赤黃血鹽之氧化還原反應比較 94 4.4.3於0.01M PBS溶液量測工作電位窗 96 4.4.4於多巴胺和尿酸之氧化還原反應比較 96 4.5 有無硼摻雜鑽石之特性比較 97 第五章 結論與未來展望 99 參考資料 101

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