本實驗以直流濺鍍系統分別臨場製備Ag(x nm)/Si、CoPt(10 nm)/Ag(x nm)/Si，其中x=0、1、5、8、10、20、40、50、80、100，各以三種不同實驗條件進行討論，分別為未經事後退火處理、事後退火300℃30分鐘以及事後退火600℃30分鐘。
針對Ag(x nm)/Si樣品之表面型態而言，在未經事後退火處理情況下x=0、1、5，Ag為顆粒狀分佈；x=8、10，Ag逐漸為連續膜，但仍有些許空洞；x=20、40、50、80、100，Ag為連續膜，但表面Ag集結且不平整。事後退火300℃30分鐘情況下x=0、1、5，Ag仍為顆粒狀分佈；x=8、10、20，受退火溫度影響，Ag集結為大小不一的島狀結構；x=40、50、80、100，Ag仍為連續膜，但表面集結較未退火前圓滑。事後退火600℃30分鐘情況下x=0、1、5，Ag仍為顆粒狀分佈；x=8、10、20、40、50、80，因受更高溫的退火影響，Ag集結為大小不一的島狀結構；x=100，仍不受高溫退火影響，但表面變得平滑。由以上結果顯示，Ag極易受溫度影響而集結，除非厚度夠薄(x=1、5)或厚(x=100)。
針對CoPt(10 nm)/Ag(x nm)/Si樣品之表面型態而言，在未經事後退火處理以及事後退火300℃30分鐘，其表面無太大的差異，皆是連續膜；經事後退火600℃30分鐘，在x=1、5、8、10，CoPt表面形態受Ag底層影響受到破壞；x=20~100，CoPt為連續膜，但表面有Ag顆粒隨機散佈。
CoPt(10 nm)/Ag(x nm)/Si樣品之XRD圖譜，在未退火以及事後退火的情況下，皆有L10 CoPt(111)，除了x=5、8、10在事後退火600℃30分鐘情況下， L10 CoPt(111)是受到破壞的，相對應於磁性質Hc⊥值。

To DC sputtering system, this experiment is prepared spot Ag (x nm) / Si、CoPt (10 nm) / Ag (x nm) / Si, in which x = 0、1、5、8、10、20、40、50、80 and 100, each samples has three different experimental conditions which have discussed, respectively, without post-annealing, post-annealing 300℃ 30 minutes and 600℃ 30 minutes.
In terms of surface morphology, Ag (x nm)/Si samples works without post-annealing treatment in the case x = 0、1、5, Ag distribution for granular； x = 8、10, Ag gradually became a continuous film, but there are still some empty cavities； x = 20、40、50、80、100, Ag for continuous film, but not the formation of surface Ag assembly. Post-annealing 300℃ 30 minutes in the case x = 0、1、5, Ag granular distribution remains； x = 8、10、20, affected by the annealing temperature, Ag island assembly structure for the different sizes; x = 40、50、80、100, Ag film is still continuous, but the surface morphology were smooth surface than before. Post-annealing 600℃ 30 minutes in the case x = 0、1、5, Ag granular distribution remains；x = 8、10、20、40、50、80, due to the impact of high-temperature annealing, Ag assembly for island structure of various sizes；x = 100, is still not affected by the high-temperature annealing, but the surface morphology becomes smooth. Furthermore, Ag were easily segregated and affected by temperature, unless the thickness of thin enough (x = 1、5) or thick (x = 100).
For samples of CoPt (10 nm)/Ag (x nm)/Si in terms of surface morphology, without annealing and post-annealing after 300℃ 30 minutes, its not much different from the surface, is continuous film；After post-annealing 600℃ 30 minutes, in the x = 1、5、8、10, the CoPt surface is affected by the destruction of Ag underlayer；x = 20 ~ 100, CoPt is continuous film, but the surface of Ag particles were randomly scattered.
The XRD patterns of CoPt (10 nm)/Ag (x nm)/Si samples, in the circumstances of working without annealing and post-annealing, both L10 CoPt (111), in addition to x = 5、8、10 post-annealing at 600℃ 30 minute, L10 CoPt (111) is damaged, the results are also corresponding the Hc value of magnetic properties.

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