本論文以非致冷式遠紅外線感測器研製及低頻雜訊分析為主要的研究。元件設計以較先進非晶矽(α - Si)作為感測層及利用微機電製程使其具有懸浮結構。懸浮結構可提高非晶矽感測層的絕熱效果，以增進元件感測能力。
非晶矽除了對於遠紅外光線較敏感外，其製程也簡單，可低溫製作以降低成本。其又是CMOS後段製程(post process)常用材料之一，具有相容的標準製程，因此可大幅降低元件的生產成本，提升產品的競爭性。此兩者使其成為製作微輻感測器的最大優勢。然而，非晶矽原子間的晶格網絡呈無序排列，使其具不穩定性。且部分原子含有懸空鍵(dangling bond)，容易造成雜訊，這些都是其致命的缺點。以往相關的研究雖多，但大多不是針對作為熱敏阻型紅外線感測材料的研究。因此，本篇就此非晶矽應用於遠紅外線熱敏阻型感測器之材料進行詳細而完整的分析研究，研究重點包含：
1.利用光罩設計製作不同結構的非晶矽微輻射遠紅外線感測元件：
本論文製作不同尺寸的懸浮結構，並利用反射層、吸收層與共振腔等結構優化其元件對遠紅外線的吸收率，探討過程中對於薄膜殘餘應力的控制與殘留犧牲層於懸浮結構造成的翹曲現象與懸浮結構塌陷等問題。
2.N型重雜質摻雜非晶矽(α - Si)薄膜製程與特性量測：
吾人使用高密度電漿化學氣相沉積系統(HDPCVD)沉積熱敏阻薄膜，並萃取其感測層的電阻溫度係數與阻值，根據文獻顯示不同製程參數的非晶矽薄膜之電阻溫度係數及阻值皆會有明顯的差異，亦決定著後續讀取電路(ROIC)的設計，針對不同退火條件下非晶矽薄膜的影響進行物性及電性之量測與分析。
3.設計不同結構與調變不同退火之元件低頻量測與分析：
非致冷的紅外線感測元件相當注重低頻雜訊對熱敏阻訊號的變化，根據文獻顯示非晶矽具有相當大的閃爍雜訊，亦是元件最主要的雜訊來源。因此本論文將調變退火溫度，進行低頻雜訊的相關研究，以探討其金屬催化、氫離子擴散與晶界效應等問題。

In this work, we propose a unique resonator structure which compatible with Si-based CMOS process to fabricate an amorphous silicon (α-Si) microbolometer for far infrared radiant (FIR) detecting applications. The α-Si is selected as sensing element for its high sensitivity to far infrared and low temperature deposition process. Besides, the process is comparable to the conventional VLSI technology, and thus can be merged into CMOS process to prepare a low cost integrated sensing system. We measured the devices characteristics and analyze the low-frequency-noise (PSD). We found the resistivity of bulk α-Si film and temperature coefficient of resistance (TCR) should tradeoff to get lower resistance α-Si pixel with higher TCR. In addition, the device sensitivity is also affected by its structure and α-Si sensing layer post treatment annealing process. For example, the device with double leg structure in both metal contact and α-Si sensing layer can gain ~3%/K of TCR, and lower than 1.63×10-8 of flicker noise at 25 Hz.

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