本論文研究之主要目的為成長並量測分析一維奈米結構(奈米線)。本論文因不同之材料種類可分為三個部份。第一部份為探討矽奈米線之成長及元件量測，第二部份為氧化銅奈米線之成長及元件製做。最後第三部份為成長氧化鋅奈米線及其相關元件之製做量測。
首先在矽奈米線之部份，本實驗成功的在玻璃基板上直接以氣態-液態-固態(vapor-liquid-solid)的方法成長矽奈米線。藉由先在玻璃基板上沈積一層很薄的非晶矽(5nm a-Si:H)，可在具有金催化劑之表面上，在500oC時成長出高密度垂直的奈米線。並且發現當未沈積此非晶矽時，則無法成長出矽奈米線，因此藉由此方法，可以在不同的基板上或不同的金屬電極上做選擇性的成長矽奈米線。利用以此方式在玻璃基板上製做矽奈米線之場發射元件，經由量測，可發現其臨界電壓為15V/μm, 且其場發射因子β約為1700。此外為了探討不同金催化劑含量對成長矽奈米線所造成之影嚮，當所沈積金的厚度由5奈米增加至15奈米時，可發現其成長出來的矽奈米線之半徑由90奈米增至490奈米，且其矽奈米線之長度由1.6微米降至1微米。而由其溼度特性之量測可發現其電流會隨著其相對溼度之高低而呈現線性之變化。經由實驗之結果，可以發現當金催化劑之厚度越薄時，其具有較高之感測反應。
在CuO的部份，本實驗成功的在Cu/CuO/玻璃上成長CuO奈米線。並且可以發現在成長CuO奈米線之後，在之前藉由濺鍍機沈積之CuO薄膜和Cu薄膜之間會有多孔結構之產生。由此方式成長之CuO奈米線其平均長度會隨著所沈積Cu薄膜的厚度增加而增加;另一方面，上述所形成之多孔結構也會隨著Cu薄膜厚度而增加。在量測其異丙醇(IPA)之特性上，由實驗結果可發現其所量測得的電流會隨著所注入異丙醇之濃度增加而減少。此外，由實驗結果可得知其異丙醇及相對溼度之感測嚮應會隨著奈米線的長度增加而增加。在另一方面，本實驗亦進行CuO奈米線的側向成長，並用其來量測對酒精之感測嚮應。當量測溫度在300度時，實驗數據顯示當所注入之酒精濃度為25, 50, 100, 200, 500和1000ppm時，其所量測到的嚮應分別為1.06, 1.11, 1.14, 1.18, 1.24及1.27。且其感測嚮應會隨著量測溫度之增加而上升。最後，本論文亦在玻璃基板上製做CuO奈米線之場發射元件，並量測其場發射特性。
在氧化鋅奈米線方面，本論文使用氣相傳輸方法(vapor phase transportation)及水浴法(hydrothermal process)這兩種方式來成長氧化鋅奈米線。此外，藉由適當的參數，藉由反應式濺鍍方式來沈積氧化亞銅(Cu2O)，並在氧化鋅奈米線上沈積Cu2O。藉由SEM影像，發現Cu2O可以填滿氧化鋅奈米線之間隔，並達到很好的表面覆蓋率，而形成同軸的p-Cu2O/n-ZnO奈米線，且其亦呈現出典型之整流特性(電流-電壓曲線)。且藉由量測其光亮暗電流特性亦呈現出大的光嚮應和反應快速。此外，本論文亦藉由水浴法，在低溫下在軟性基板上成長氧化鋅奈米線且同時量測其相對溼度之嚮應。藉由電子顯微鏡之影像可發現所成長之氧化鋅奈米線其平均長度及半徑分別為0.6μm及50nm，並量測此氧化鋅奈米線在不同溼度環境下之嚮應。

The main goal of this dissertation is the growth and analyses of 1D semiconducting nanowires. The dissertation is divided into three sections due to different kinds of material. The first one is the investigation of silicon nanowires and the second is the growth and analyses of CuO nanowires. Finally, ZnO nanowire-based devices are also demonstrated.
In the beginning of this dissertation, high density silicon nanowires (SiNWs) are selectively grown on Cr/glass template with a very thin 5-nm-thick a-Si:H layer at 500oC by vapor-liquid-solid process using Au-Si nano-particles as catalyst. It is found that SiNWs cannot be grown without the a-Si:H layer. Field emitters using these SiNWs are also fabricated on glass substrate. It was found that threshold field of the fabricated field emitters was 15 V/m and the field enhancement factor, β, of the fabricated SiNWs field emitter was around 1700. In order to further investigate the growth of SiNWs, different distributions of Au catalyst are utilized to grow SiNWs. It is found that average length of Si nanowires decreased from 1.6 to 1 μm while the diameter of Si nanowires increase from 90 to 490 nm as we increase the initial Au catalytic layer thickness from 5 nm to 15 nm. While measuring their humidity properties, it is also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.
For CuO nanowires, growth of CuO nanowires on Cu/CuO/glass templates is reported. It is found that porous structures are formed at the interface between sputtered CuO film and Cu layer after annealing. The average length of the nanowires and thickness of the porous structure both increase monotonically as we increase the initial thickness of the copper film. The CuO nanowires are used to fabricate isopropyl alcohol (IPA) sensors. With a 5V applied bias, the current became smaller as the isopropyl alcohol is injected into the sealed test chamber. Furthermore, the measured responses of IPA and humidity are larger for the sensors with longer CuO nanowires. Lateral growth of CuO nanowires is also demonstrated to fabricate the ethanol sensor. The sensing responses measured at 300oC were around 1.06, 1.11, 1.14, 1.18, 1.24, and 1.27 when the concentration of injected ethanol gas were 25, 50, 100, 200, 500, and 1000 ppm, respectively. Also, CuO nanowires tend to exhibit higher response to ethanol gas with increasing sensing temperature. A CuO nanowire-based field emitter is also fabricated. Instead of fabricating CuO field emitter on copper foil or copper substrate, glass is utilized as the substrate for CuO emitter.
For the aspect of ZnO nanowires in this dissertation, vapor phase transportation and hydrothermal process are utilized to grow ZnO nanowires. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current-voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses. We also grow ZnO nanowires on flexible substrate by hydrothermal process and the fabrication of ZnO NW-based humidity sensor. It is found that average length and diameter of the ZnO NWs were 0.6 μm and 50 nm, respectively. The sensing properties are also measured with different humidity.

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