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研究生： 施丞達
Shih, Cheng-Ta
論文名稱： 化學氣相沈積法製備氮化鎵奈米線及其特性研究
The Preparation and Characterization of GaN Nanowires by Chemical Vapor Deposition
指導教授： 陳引幹
Chen, In-Gann
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2006
畢業學年度： 94
語文別： 中文
論文頁數： 105
中文關鍵詞： 光激發光光譜 、奈米線 、氮化鎵 、氣-液-固(VLS)機制 、場發射
外文關鍵詞： GaN, photoluminescence, field emission
相關次數： 點閱：71  下載：1 
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    • 本研究使用鉑當催化劑，以氣-液-固(VLS)機制分別在矽基板、藍寶石基板和石英基板上成功長出氮化鎵奈米線。藉由調變製程溫度，可改變其奈米線直徑大小；改變通入載氣流量的比例，則可以使奈米線分布均勻和其密度、長度增加。由表面元素分析(XPS)， Ga3d束縛能符合Ga-N之鍵結能，可證實本系統可成長出氮化鎵。在表面形貌分析部份，可以觀察到氮氣載氣流量比例的提升，對其氮化鎵奈米線之外貌並沒有顯著影響，奈米線直徑分佈約50~100nm。而氫氣載氣流量比例的提升，當氫氣達到400sccm以上時，奈米線結構即有明顯改變，形成寬度約為100nm之奈米帶，且其中一面具有兩排奈米凸起物，其凸起物產生與製程結束後通入氨氣持續成長有關。此凸起結構亦能將場發射起始電場降低至8.5 V/μm。發光特性部分，氮氣流量比例的提升，對其光激發光譜的鋒值並不造成影響，皆位於3.37eV左右；但氫氣流量比例的提升，其光激發光譜的鋒值會呈現紅移的現象，從3.38紅移至3.25eV，推測可能是因氫氣造成氮化鎵內部產生鎵空孔有關。藉由改變基板材料，可發現使用與氮化鎵晶格常數匹配度較佳的藍寶石基板，所成長出之氮化鎵奈米線方向性較佳，且從光激發光譜中，並沒有發現到黃光帶的出現，顯示使用藍寶石基板，所成長出之氮化鎵奈米線缺陷較少。

    Gallium nitride (GaN) nanowires with a diameters of 50~100nm were formed on the platinum coated silicon substrate by chemical vapor deposition method in different carrier gas ratios (N2, H2). This result shows that the platinum is an effective catalyst for growth the one dimension GaN materials. The crystal structure, optical and electrical properties of GaN nanowires were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), Raman scattering, filed emission, and high resolution transmission electron microscopy techniques (HRTEM). XPS and Raman scattering spectra indicated that the gallium oxide was not observed in the GaN nanowire. The XRD and TEM images indicate that the formed GaN nanowires are wurtzite structure and the growth direction of protrusion on surface is [0001]. The PL measurement reveals that the ultraviolet light emission is near the bang gap of wurtzite GaN at 3.4eV within different N2 carrier gas. On the other hand, the red shift of the PL peak from 3.38eV to 3.25eV is observed within the H2 carrier gas. The field emission results indicate that the GaN nanowires with protrusions exhibit lower threshold field and higher field enhancement factor (β) compared with the GaN samples with a smooth surface.

    中文摘要...........................................I 英文摘要..........................................II 目錄.............................................III 圖目錄............................................VI 表目錄...........................................XII 第一章 緒論........................................1 1-1 前言...........................................1 1-2 奈米材料的基本物理效應.........................3 1-3 實驗動機與目的.................................5 第二章 奈米線成長原理和氮化鎵文獻回顧..............7 2-1 氮化鎵材料概述.................................7 2-2 奈米線成長原理.................................8 2-2-1 奈米碳管模板法...............................9 2-2-2 VLS(vapor-liquid-solid)法...................11 2-2-3 VS(vapor -solid)法..........................12 2-3 氮化鎵奈米線發展現況..........................14 2-3-1 模板成長高度有序氮化鎵奈米線................14 2-3-2 氮化鎵奈米管................................16 2-3-3 基板控制氮化鎵奈米線成長方向................17 第三章 實驗流程與分析儀器.........................31 3-1 實驗流程......................................31 3-1-1 實驗材料....................................31 3-1-2 基板前處理..................................32 3-1-3 化學氣相沈積實驗步驟........................33 3-2 實驗分析儀器..................................34 3-2-1 掃描式電子顯微鏡(SEM).......................34 3-2-2 低掠角X 光薄膜繞射儀(GIAXD) ................34 3-2-3 微拉曼光譜儀（Micro-Raman Spectrumeter）....35 3-2-4 微光激發光譜儀(Photoluminescence) ..........37 3-2-5 化學分析電子光譜儀(ESCA)....................38 3-2-6 電子場發射量測儀............................39 第四章 實驗結果與討論.............................48 4-1 改變成長溫度..................................48 4-1-1 奈米線表面形貌分析..........................48 4-1-2 晶體結構分析................................49 4-1-3 表面元素分析................................49 4-2 通入不同氨氣與氮氣混合比例....................58 4-2-1 試片沈積物均勻性............................58 4-2-2 奈米線表面形貌分析..........................59 4-2-3 晶體結構分析................................59 4-2-4 顯微拉曼分析................................60 4-2-5 光激發光分析................................61 4-3 通入不同氨氣與氫氣混合比例....................67 4-3-1 試片沈積物均勻性............................67 4-3-2 奈米線表面形貌分析..........................67 4-3-3 晶體結構分析................................69 4-3-4 顯微拉曼分析................................70 4-3-5 光激發光分析................................70 4-4 改變基板材料..................................78 4-4-1 奈米線表面形貌分析..........................78 4-4-2 晶體結構分析................................79 4-4-3 顯微拉曼分析................................79 4-4-4 光激發光分析................................80 4-5 奈米線場發射分析..............................85 第五章 結論.......................................94 參考文獻.. .......................................96

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