本研究利用射頻磁控濺鍍法在玻璃基板上沉積二氧化鈦摻雜鈮(TiO2: Nb)薄膜，並藉由調變氧分壓、沉積時間與退火溫度來探討所製備TiO2: Nb薄膜之晶體結構、光學特性及表面粗糙度。實驗結果顯示，所製備之TiO2: Nb薄膜在可見光範圍內，其穿透度為70~90% 。從氧元素之XPS能譜分析得知，氧空缺確實存在於TiO2: Nb薄膜，並影響TiO2: Nb薄膜的穿透性與能隙變化。
此外，為了提升TiO2: Nb薄膜特性，進行不同溫度與氣氛之退火處理。發現在300 oC真空環境下，進行退火處理一小時，此薄膜具有較高可見光範圍穿透率(70~90%)又兼具低紅外光穿透率(約20~40%)特性，適合應用於減少紅外光通過之薄膜材料。

TiO2:Nb thin films were deposited on glass substrates using the RF magnetron sputtering method. The O2 partial pressures, deposition time, annealing temperature were adjusted to study their effects on TiO2:Nb thin film. The crystal structure, optical properties, and surface roughness of TiO2:Nb thin films are investigated using X-ray diffraction, X-ray photoelectron spectra, and transmittance spectra. The difference in band gap energy of TiO2: Nb thin films with different O2 partial pressure is caused by the oxygen vacancy inside the TiO2:Nb thin films. This statement is proven by the XPS spectra which shows the shift of O(1s) peaks in TiO2:Nb thin films with various O2 partial pressure. A high transmittance TiO2:Nb thin films in visible region were prepared with post annealing treatment under various temperature and atmosphere for 1 hour. The properties of TiO2:Nb thin films as well as the surface microstructure starts changing after TiO2:Nb thin films annealed under vacuum and N2, respectively. The transmittance of TiO2:Nb thin films obtained 70%~90% in the visible light range. TiO2:Nb thin films annealed in vacuum at 3000C with films annealed in N2 have higher value of Root mean square (RMS) roughness obtained by SPM measurement which are RMS= 7.47nm and RMS= 6.42nm , respectively. TiO2:Nb thin films annealed in vacuum and N2 atmosphere can cut IR light with 1250nm and above with the lowest transmittance is in the range of 20%-40% transmittance in IR region. For TiO2:Nb thin films deposited with different %wt Nb, all TiO2:Nb thin films have same spectra after annealed in vacuum at various temperature except for TiO2:Nb thin films with 5%wt Nb doping annealed at 6000C. This film can cut IR light in the range of 40%-60% transmittance in IR region.

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