隨著光電產業的蓬勃發展，新的材料與技術不斷被發展出來，透明導電薄膜即是近年來的熱門材料。所謂透明導電薄膜即是一種紫外光吸收、可見光穿透與紅外光反射的材料，傳統上多使用ITO材料，但因為其材料成本昂貴，且日漸稀少，所以一直有想以新的材料想取代它，AZO便是一例。在適當條件下，AZO可製作出與ITO相媲美之特性且價格更低廉，極具競爭優勢。

本論文主要採溶膠-凝膠法與退火處理技術，進行氧化鋅鋁（AZO）薄膜的成長與光學、電學性質的研究。探討製程參數、退火溫度及材料結構變化，對於摻不同莫耳濃度之鋁比率，建立較佳薄膜製程參數。進一步以此參數為基礎，改變不同氣份的退火環境與退火溫度，分析其對薄膜表面結構、其光學、及電學性質的影響。
本實驗結果在後處理加入氬氣的退火環境中，在退火溫度550℃、退火時間30秒下，在10-Layers氧化鋅鋁薄膜電阻率達最低1.4x10-2Ω-cm。
氧化鋅透明導電膜最常摻雜金屬材料以提升導電性，本實驗以配方不同、製程不同、分析架構更具完整性為目標，探討以較佳電阻率之氧化鋅鋁薄膜條件下使光穿透率與導電性提升。未來可作為各產品製備條件需求而提供另一個研究的方向。

With rapid development of the photovoltaic industry, new materials and technologies are constantly developed. The transparent conductive film is an absorbing UV, visible light transmission and infrared light reflecting material. The traditional ITO material is expensive, and increasingly rare, so new materials are sought to replace it, AZO(Aluminum Zinc Oxide) is one of the alternative. Under appropriate conditions, AZO can be produced with comparable ITO characteristics and the price is comparably more affordable and highly competitive.
This paper adopts a sol - gel method and annealing technique to make aluminum zinc oxide thin films. Of process parameters, annealing temperature and the amount of aluminum doped are established to obtain the best process parameters of the film. Further, the different copies of the annealing gas environment and annealing temperature are also investigated.
The results in the post-annealing treatment in the argon gas environment, at the annealing temperature of 550℃, annealing time of 30 seconds, the 10-Layer AZO film has the lowest resistance of 1.4x10-2Ω-cm.
Most transparent conductive films of zinc oxide are doped with metallic materials to enhance conductivity, this study investigates different formulas, different processes, frameworks, to systematically achive integrity better performance of reducing resistivity and increasing transmittance of AZO and can serve as a base for future studies.

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