研究生: |
石富勻 Shih, Fu-Yun |
---|---|
論文名稱: |
幾丁聚醣添加對LiMn2O4陰極薄膜製程及
其電化學性能效益之研究 Effect of Chitosan Addition on Deposition and Electrochemical Behaviors of Thin-Film LiMn2O4 Cathodes by Sol-Gel Method |
指導教授: |
方冠榮
Fung, Kuan-Zong |
學位類別: |
博士 Doctor |
系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
論文出版年: | 2006 |
畢業學年度: | 94 |
語文別: | 中文 |
論文頁數: | 124 |
中文關鍵詞: | 鋰離子電池 、幾丁聚醣 |
外文關鍵詞: | Li-ion batteries, chitosan |
相關次數: | 點閱:82 下載:3 |
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由於溶膠-凝膠法不需要昂貴設備、製程簡易以及薄膜組成和微結構易控制等特點,為目前廣泛採用薄膜製程之一。然而,以溶膠-凝膠法製備LiMn2O4薄膜,其性質易受前驅物溶液本質影響,例如沉澱物之形成或前驅物溶液與基材間附著性差造成膜厚不均等問題。因此,在本研究中提出以幾丁聚醣為添加劑,發現幾丁聚醣添加除了可穩定含醋酸鋰/醋酸錳乙醇溶液長達十個月未發現沉澱物,而且對單相LiMn2O4薄膜形成、
緻密化以及其電化學性質都有明顯提升。FT-IR和7Li NMR光譜之分析,發現當醋酸鋰/醋酸錳加入幾丁聚醣後,鋰/錳離子自醋酸中解離,隨後與幾丁聚醣的胺基發生化學鍵結,這可使鋰/錳離子達分子級分散,因而抑制雜相生成。此外,在利用上述前驅物溶液製備LiMn2O4薄膜過程中,也發現適當熱處理程序可促進LiMn2O4薄膜的緻密化。熱分析顯示幾丁聚醣熱分解起始溫度約為300℃,因此藉由300℃和緩熱分解,可抑制孔洞的形成以及誘使奈米尺度LiMn2O4晶粒生成,隨後更高溫度(≧400℃)熱處理將促使晶粒進一步成長而形成一緻密薄膜。充放電測試實驗顯示,由於幾丁聚醣添加可抑制雜相生成,因此所製備LiMn2O4薄膜陰極,具有較大放電容量(在1C 放電速率下,具有134 mAh/g)和較高速率容量性能(8C放電容量約為1C放電容量86.4%)。
此外也發現,等量添加下,含幾丁聚醣前驅物溶液黏滯度較含聚乙烯喀酮前驅物溶液黏滯度高,在薄膜製備過程中證實適度提高溶液黏滯度是有助於LiMn2O4膜沉積。在電化學行為方面,由於幾丁聚醣和聚乙烯喀酮在300℃即分解,因此沉積自上述兩種前驅物溶液之LiMn2O4薄膜,在經700℃熱處理後,充放電行為並沒有顯現明顯差異。
Sol-gel method is one of the methods which were widely employed to fabricate thin films, due to low cost, simple processing and ease of controlling the composition stoichiometry and desired microstructure. However, the quality of the deposited LiMn2O4 films was highly dependent on the nature of the precursor solution. For example, the poor wettability between the precursor solution and substrate resulted in a inhomogenous film. Thus, in this study, a natural biomaterial, chitosan, was used as an additive. It was found that the addition of chiotsan can not only stabilize the lithium/manganese acetates-containing ethanol solution with no formation of precipitates for at least 10 months, but also be beneficial to the formation of a single-phase LiMn2O4 film. This is attributed to the chelating between chitosan and Li+/Mn2+ ions. Moreover, the electrochemical tests also showed that the LiMn2O4 film deposited from the chitosan-added precursor solution exhibits a higher discharge capacity of 134 mAh/g at 1C and a better rate performance (86.4% of the discharge capacity at 1C can be maintained when the discharge rate increases from 1C up to 8C) in comparison with one from the chitosan-free solution.
On the other hand, dense LiMn2O4 films deposited on a Pt-coated silicon substrate were obtained by annealing the deposited Li-Mn-O-chitosan films under a two-stage heat-treatment procedure. It was demonstrated that the preheat-treatment at 300℃plays an important role in the densification of LiMn2O4 films. This is due to the inhibition of forming pores and the formation of the nano-sized LiMn2O4 crystallites. And a postheat-treatment at a higher temperature (≧400℃) in the second stage will lead to the crystal growth of LiMn2O4 nanocrystallites and the formation of a dense LiMn2O4 film. Furthermore, the electrochemical performance of the LiMn2O4 films deposited from the chitosan-added precursor solution was dependent on the annealing temperatures. The LiMn2O4 film calcined at 700℃ for 1 h showed the highest Li-ion diffusion coefficient, 1.55×10-12 cm2/s among all calcined films. It is due to the larger interistial space and better crystal perfection of LiMn2O4 film calcined at 700℃. Thus, the 700℃-calcined LiMn2O4 film exhibited the best rate performance in comparison with the ones calcined at other temperatures.
The effect of the addition of chitosan or PVP in the precursor solution on the deposition and electrochemical properties of LiMn2O4 films was also studied. Due to the adequate viscosity of the chitosan-added precursor solution, the films deposited from the chitosan-added precursor solution showed a higher deposition rate than ones from the PVP-added solution under the same coating parameters. And the charge-discharge tests indicate that the addition of chitosan or PVP in the precursor solution shows little difference on the electrochemical properties of the resultant LiMn2O4 films. Owing to the low thermal decomposition temperature of both chitosan and PVP (about 300℃), a heat-treatment of 700℃ would result in the complete removal of chitosan or PVP in the prepared films. Thus, these LiMn2O4 films prepared from either the chitosan- or PVP-added precursor solutions exhibit no discernible difference in the electrochemical behaviors.
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