矽穿孔(Through Silicon Via, TSV)技術利用垂直鑽孔導通的方式連接晶片，相較於打線(wire bonding)技術大幅縮短導線長度，提供更低的電阻與電感效應，降低功率損耗並增進元件的效能，且擁有異質整合等優點，於應用方面能與各式半導體元件整合。而在記憶體發展趨勢中，電阻式記憶體(Resistive Random Access Memory, RRAM)被視為下個世代的非揮發性記憶體，其相較於快閃記憶體(Flash Memory)，擁有結構簡單、較小的面積、操作速度快、低寫入功耗、非揮發性與高操作週期等優點，同時也與CMOS製程相容，在產業界與學術領域中越來越多人投入RRAM的研究中。綜合上述所提及，我們可以預測TSV技術與RRAM元件終將進行整合，故本論文之目的在於將TSV技術與RRAM元件整合並進行探討。
將RRAM整合於TSV之前，首先我們製作四種不同電極結構之氧化鎳RRAM，其中氧化鎳薄膜是利用射頻磁控濺鍍法(Radio Frequency Magnetron Sputtering Method)成長，量測此四種結構RRAM之電流電壓掃描曲線，並探討其穩定性。最後選擇上下電極皆為白金結構的RRAM整合於TSV，並成功量測其電流電壓特性曲線，在耐用度測試上穩定達到100次循環，高低阻態在0.1V時的電流比值達到兩個階數(order)，其寫入電壓(set voltage)與拭去電壓(reset voltage)呈現穩定常態分佈，接著在記憶時間(retention time)可靠度方面的量測，其記憶窗口(memory window)在經過10000秒的量測後，依舊保持其優異儲存特性，最後利用曲線擬合(curve fitting)的方式進行內部漏電流機制的探討。

Through Silicon Via (TSV) technology vertically connects the chips arranged in stack, which helps to enhance the chip performance by greatly shortening the length of the conducting wire. On the other side, as the development of memory constantly aiming for faster memory devices with high storage capacity, Resistive Random Access Memory (RRAM) is considered the nonvolatile memory of next generation. It is foreseeable in a near future that the possibility of integrating the TSV platform with RRAM components may one day come to a reality! Therefore, the purpose of this thesis is to evaluate the plausibility of this merger. First, nickel oxide based RRAMs with four different electrode structures were fabricated, of which nickel oxide was grown using a radio frequency magnetron sputtering method. The properties and stability of these four different types of RRAM were evaluated. The platinum was chosen as the top and bottom electrode for RRAM integrated with the TSV structure, and the resultant current-voltage characteristics were duly measured. As for the endurance test, it was stably enough to achieve 100 cycles, and the current contrast ratio between the high and low resistance setting at 0.1V was found to be at least two orders of magnitude. Its set and reset voltage showed a stable normal distribution. Furthermore, the retention time reliability test also demonstrated that the memory window still maintains its excellent storage characteristics after more than 10,000 seconds. Finally, a series of curve fittings was applied to analyze the XPS data set in order to discuss the internal leakage current mechanism.

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