簡易檢索 / 詳目顯示

研究生: 郭傑維
Guo, Jie-Wei
論文名稱: 多層AB堆疊石墨在電場下的電子性質
The electronic properties of AB-stacked multilayer graphenes in an electric field
指導教授: 林明發
Lin, Min-Fa
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2012
畢業學年度: 100
語文別: 中文
論文頁數: 34
中文關鍵詞: 石墨多層電場
外文關鍵詞: graphite, multilayer, electric field
相關次數: 點閱:69下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 本論文用tight-binding method來研究多層AB堆疊石墨在電場下的效應。我們發現了在少層能帶會產生能隙,而在多層能帶會重疊,隨著層數的增加,重疊的範圍越大。多層石墨加上電場後的態密度與少層相比也有很大的差別,多層能帶會擴散開來,造成低能處態密度上升幅度比少層大。我們還分析了費米能上態密度隨電場和隨層數的變化,最後再討論多層的吸收光譜。

    I use the tight-binding method to study the effect of AB-stacked graphite in the electric field. We found that the energy band will produce the energy gap in few-layers, and overlap in multi-layers. The overlap will become wider with the increased number of layers. The density of states of multi-layer graphene is very different compared to few-layers, the energy band will spread up and the density of states will become larger than few-layers. We also analyzed the the density of states on the Fermi energy with the changes of the electric field and the number of layers. Finally, we discuss the absorption spectra.

    第一章 介紹 1 第二章 理論和方法 2 2.1石墨結構及tight-binding method 2 2.2加電場的效應 7 2.3態密度 7 2.4吸收光譜 8 第三章 電子特性 9 3.1能帶 9 3.2能隙 24 3.3態密度 25 3.4費米能上態密度 30 3.5吸收光譜 32 第四章 結論 33 參考文獻 34

    [1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y.Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666(2004)
    [2] K. S. Novoselov, E. McCann, S. V. Morozov, V. I. Fal’ko, M. I.Katsnelson, U. Zeitler, D. Jiang, F. Schedin, and A. K. Geim,Nat. Phys. 2, 177(2006)
    [3] B. Partoens and F. M. Peeters, Phys. Rev. B 74, 075404(2006)
    [4] M. Koshino, Phys. Rev. B 81, 125304(2010)
    [5] S. B. Kumar and J. Guo, Appl. Phys. Lett. 98, 222101(2011)
    [6] D. D. L. Chung, J. Mater. Sci. 37, 1475(2002)
    [7] M. Araidai, Y. Nakamura, and K. Watanabe, Phys. Rev. B 70, 245410(2004)
    [8] C. P. Chang, Y. C. Huang, C. L. Lu, J. H. Ho, T. S. Li, and M. F. Lin, Carbon 44, 508(2006)
    [9] C. L. Lu, C. P. Chang, Y. C. Huang, R. B. Chen, and M. L. Lin, Phys. Rev. B 73, 144427(2006)
    [10] G. Grosso and G. P. Parravicini “Solid State Physics”(2000)
    [11] W. Zhu, D. Neumayer, V. Perebeinos, and P. Avouris, Nano Lett. 10, 3572(2010)

    無法下載圖示 校內:2014-07-30公開
    校外:不公開
    電子論文尚未授權公開,紙本請查館藏目錄
    QR CODE