銲線製程後金線受損問題對TSOP構裝型態來說，是一項影響其測試良率優劣的重要因素，此現象對TSOP在複合晶片封裝之線長增長及導腳寬度減小的應用趨勢下更加嚴重。

　　本文中採三維方式做線弧衝擊模擬，用ANSYS 分析衝擊發生時作用在TSOP IC的線弧的熱影響區之拉應力。

　　探討改善方法電腦模擬時線弧的條件，固定條件如金線直徑、導腳長度及熱影響區，變化條件如線弧高度、線弧長度及臺形線弧之平台區比率，然後利用田口式實驗設計法，找出一組最佳的線弧條件，最後並做變異分析，找出重要的因子，並選出最佳生產條件之線弧設定。

　　透過本文之ANSYS及田口式實驗設計法的建立，使設計者可在生產前做出對改善製程衝擊問題較佳設計。

　　The wire damage problem after wire bonding process for TSOP product is one of the major factors to affect testing yield. This phenomenon is more significant as the wire length increases and lead width decreases in TSOP multi-chip package.

　　In this paper, a three-dimensional model is used for the simulation of the impact damage of wire loop. On the impact moment, the tensile stress on heat-affected-zone of gold wire loop of TSOP IC package is analyzed by using the ANSYS.

　　In the loop simulation for improvement, looping condition, fixed such as wire diameter, lead length, and heat-affected-zone. Various conditions such as loop height, wire length, and top length ratio of square loop were investigated on the improvement of wire damage. Then apply Taguchi Methods in order to find an optimal looping condition. Finally, using the analysis of variance to find out the major factors and select an optimal looping condition for production.

　　Through the ANSYS and Taguchi Method in this paper, package designer can do a better design for process impact problem improvement before production.

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