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研究生: 蕭永昇
Hsiao, Yung-sheng
論文名稱: 利用滲透法成長超導單晶粒塊材之研究
Study of the Mechanism of Single Grain Superconductor by Infiltration Growth Method
指導教授: 陳引幹
Chen, In-Gann
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年: 2007
畢業學年度: 95
語文別: 中文
論文頁數: 117
中文關鍵詞: 釔鋇銅氧超導體滲透法
外文關鍵詞: Y-Ba-Cu-O, infiltration growth method, superconductor
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  • 由於超導塊材所能擄獲的磁場強度正比於其臨界電流密度(Jc)與單晶粒的尺寸大小。為提升其在工業應用的可能性,主要研究致力於如何提升其磁通釘扎能力(Flux pinning strength)以及成長更大此寸的單晶粒超導塊材。
    本研究主要利用滲透法(Infiltration growth method)成長Y-Ba-Cu-O單晶粒超導體,並利用球磨與添加CeO2的方式,細化成長後Y-Ba-Cu-O單晶粒超導體內部Y2BaCuO5粒徑,藉以得到Jc的提升。
    實驗結果顯示,利用滲透法成長的Y-Ba-Cu-O單晶粒超導體,其Jc比利用傳統頂端熔融製程方法成長(Top seed melt-texture growth)的Y-Ba-Cu-O單晶粒超導體高,且利用滲透法成長的Y-Ba-Cu-O單晶粒超導體沒有傳統頂端熔融製程的體積減縮問題,所以較易成長出較大的單晶粒超導體。
    另一方面,利用球磨30分鐘細化Y2BaCuO5前驅物後,經滲透法成長的Y-Ba-Cu-O單晶粒超導體,其Jc稍稍比未球磨的提升一些;而利用添加1.5wt%的CeO2後,經滲透法成長的Y-Ba-Cu-O單晶粒超導體,其不論在低場或高場下的Jc皆有大幅的提升。

    The magnitude of trapped field within bulk superconductors is proportional to the critical current density and the size of single grain. So, it is necessary to improve the flux pinning ability and produce larger size single grain RE-Ba-Cu-O, which are both key issues to practical applications.
    In this study, we try to grow the Y-Ba-Cu-O single grain superconductors by the infiltration growth method (IG). The ball-milling technique and the doping CeO2 method are utilized to decrease the grain size of Y211 in the textured single grain YBCO superconductors and enhance the Jc.
    The experimental results reveal that the Jc of the YBCO superconductor by the IG process is higher than that by the conventional top-seeded melt-textured growth method (TSMTG). And the outcome shows that the YBCO single grain produced by the IG process has no volume shrinkage problem. So, the YBCO superconductor could grow larger by the IG method.
    In the other research, the Jc of the sample, which is after the 30 minutes ball milling decreasing Y211 precursors, increases a little bit by the IG process. And the doping CeO2 sample enhances the Jc drastic under the low and high applied magnetic field.

    中文摘要..................................................I 英文摘要.................................................II 目錄....................................................III 表目錄....................................................V 圖目錄...................................................VI 第一章 緒論...............................................1 第二章 理論基礎與文獻回顧.................................5 2-1超導體的發展歷程與基礎理論.............................5 2-1.1超導體的發展歷程.....................................5 2-1.2超導體特性...........................................8 2-1.3 Weak-links in the Grain Boundary...................10 2-1.4 Ginzburg-Landau Theory.............................11 2-1.5界面能A.............................................12 2-1.6界面能B.............................................14 2-1.7超導體的分類........................................15 2-2滲透法(Infiltration growth method)....................19 2-2.1滲透法之成長模型....................................19 2-2.2滲透法之成長機制....................................19 2-3單晶粒Y-Ba-Cu-O熔融製程影響因素.......................22 2-3.1頂端接種技術:晶種的影響............................22 2-4臨界電流密度的提升....................................25 2-4.1臨界電流密度定義(critical current density)..........25 2-4.2渦旋線的釘扎(pinning of vortex).....................25 2-4.3缺陷的引入..........................................27 2-4.4非超導相的釘扎性能(RE211)...........................28 2-4.5非超導相的細化......................................29 第三章 實驗方法及步驟....................................50 3-1實驗藥品..............................................50 3-2實驗流程(IG)..........................................50 3-3實驗流程(MTG).........................................52 3-4性質分析..............................................54 3-4.1粉末之熱性質分析....................................54 3-4.2相成分之鑑定........................................54 3-4.3微結構觀察..........................................54 3-4.4超導性能的量測......................................54 3-5儀器設備..............................................56 第四章 結果與討論........................................64 4-1起始粉末合成..........................................64 4-1.1 XRD鑑定............................................64 4-1.2粒徑分析結果........................................64 4-2滲透法長晶機制與升降溫曲線對晶粒成長之關聯性..........66 4-2.1滲透法長晶的機制....................................66 4-2.2滲透法的升降溫曲線對晶粒成長之關聯性................68 4-3滲透法長晶的機制與現象討論............................71 4-3.1 Y211的粒徑大小與分布情形...........................71 4-3.2孔洞密度............................................72 4-3.3臨界電流密度........................................73 4-4細化Y211相............................................75 4-4.1利用球磨直接細化起始粉末的方式......................75 4-4.2添加CeO2於長晶過程細化Y211相........................77 4-5综合討論..............................................81 第五章 結論.............................................110 參考文獻................................................111

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