在我們的實驗研究報告中，我們將利用簡單、可行的方法去合成三元奈米複合電極材料。此三元奈米複合材料是在含有二硫化鉬(MoS2)、三氧化鉬(MoO3)均勻分布的懸浮溶液中加入吡咯(Pyrrole)單體，再經由氧化聚合反應合成一新穎且具備高效能的複合材料，我們將此複合物應用於超級電容之電極材料。
我們利用部分氧化剝離法去製備具有MoO3奈米結構顆粒點綴於表面的少層奈米片狀的MoS2溶液，再加入吡咯單體，經過原位氧化聚合反應合成MoS2/ MoO3/PPy複合材料。而本次研究主要著重在(1)經由改變不同反應天數(1 dy, 1.5 dy, 2 dy, 2.5 dy, 3 dy, 5 dy)後部分氧化剝離的MoS2之變化，並且做一添加過量雙氧水(6.9 ml)的試片作為對照，並提出可能的反應機制；(2)將前一步反應後的的試片(1 dy, 2 dy, 3 dy)加入定量Pyrrole單體(5.3 μl)合成為三元複合材料，並且探討其電容值的提升與現象。
將以上所得到的材料利用不同儀器進行材料與電化學的分析。主要使用的儀器包含(1)表面形貌:掃描式電子顯微鏡(Scanning electron microscopy, SEM)、穿透式電子顯微鏡(Transmission electron microscopy, TEM)；(2)物理化學性質:Zeta-電位分析儀(Zeta-potential analyzer)、拉曼光譜儀( Raman spectrometer)、電子能譜儀(X-ray photoelectron spectrometer, XPS)、傅立葉轉換紅外光譜(Fourier transform infrared spectroscopy ,FTIR)；(3)電化學特性:循環伏安法(cyclic voltammetry, CV)、電化學阻抗頻譜(Electrochemical impedance spectroscopy, EIS)等。
經由SEM得知MoS2將隨著反應天數的增加，從原本的塊狀材料剝離成具有少層片狀結構，再經過更長時間反應後，發生穿孔而變成具有孔洞的片狀結構，最後變成奈米尺度的小片狀或是點狀結構；經由兩天反應後的MoS2因具有較大比表面積與適中電性，而有最佳表現(188F g-1)。最後，我們將PPy加入系統中形成三元奈米複合材料，其所得到的電容與循環壽命表現皆有顯著的提升。

Herein, we focus our study primarily on (1) The effects of the time (1dy, 1.5dy, 2dy, 2.5dy, 3dy, 5dy) and the amount of H2O2 (4ml and6.9ml) during the MoS2 partially oxidized exfoliation process and the mechanism involved. (2) Synthesis of MoS2/MoO3/PPy ternary composites from as-prepared suspension solutions (1dy, 2dy, 3dy) with various amounts of Py monomer (5.3μl and 10.6μl). (3) Propose a reasonable mechanism of the unexpected formation of carbon film.
In our study, MoS2 was exfoliated into large area few-layered sheet for 1dy reaction. Furthermore, MoS2 was penetrated by H2O2 and the morphology became sheet structure with pores. Finally, MoS2 lateral size decreased into nanoscale and became nanosheets or nanodots during following reaction day. Then we discussed the electrochemical performance of MoS2/MoO3 and their PPy composites. For merely MoS2/MoO3, the highest capacitance reached 188 F g-1. After PPy addition, either 1dy, 2dy or 3dy MoS2/MoO3 all had a dramatic capacitance promotion. The highest specific capacitance reached 405.7 F g-1 at the scan rate of 10 mV s-1 and showed barely degradation after 500 cycles charge-discharge testing.

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