光波導調變器一直是發展積體光學最重要的元件之一，在本論文中以SOI基板製作之多模干涉器(MMI)與 Mach–Zehnder干涉器(MZI)此兩種架構來探討矽之非線性特性，實驗中所使用的激發光源分別有532nm之Q Switch雷射及980nm的CW雷射，實驗最終所量測之MZI結構搭配螢光粉調之變深度最大分別可達95%及-11.475dB，而以綠光雷射激發之MZI之最佳調變深度與消光比分別為37.49% 與-2.04dB，MMI調變深度與消光比最大分別可達51.5%及-3.145dB。
在所有矽光學調變器的調變機制中，因材料本身的因素，電光效應顯得很微弱，需要加入很大的電場才能使矽折射率改變；而熱光效應雖然對折射率變化有較大的影響力，但其缺點為響應速度較慢，本篇論文即以透過外加雷射光源使矽材料產生光子吸收的方式產生自由載子，並藉此改變折射率乃至相位改變，影響元件的輸出，使得輸出有調變的效果，在MZI上我們成功的使其達到調變的效果，而在MMI上或許是因為雷射聚焦所伴隨的熱效應或其他因素的影響，使其輸出並沒有出現預期中的切換效果，之後若改用較薄的SOI應能有所改善。

Optical modulator has always been one of the most important devices in the technological development of integrated optics. In this thesis, silicon-on-insulator (SOI) substrates are used to fabricate Multimode interference (MMI) and Mach-Zehnder interferometers (MZI), and both of which are used to study optical nonlinearities of silicon. To facilitate the study, 532nm Q-switch green pulse laser and 980nm near-infrared continuous-wave (CW) fiber laser are utilized separately as excitation sources. The final experimental results demonstrate that the modulation depth and the extinction contrast ratio in MZI coated phosphor film is 95% and -11.475dB, respectively.When we change the 532nm Q-switch green pulse laser to exicited source.The highest modulation depths associated with MZI and MMI 37.49% are and 51.5%, respectively. The highest extinction contrast ratio achieved is approximately-2.04dB and -3.145dB, respectively. We successfully demonstrated the modulation effect in MZI using the 532nm Q-switch green pulse laser to exicited source, but in MMI experimental results also show that with several factors, including the heat generated locally in the region as induced by the external laser focusing, the MMI devices fail to demonstrate the expected switching effect.

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