本篇研究在不同電解質及溫度上利用電沉積法製作硒化鋅薄膜。不同電解質的擴散係數經由Fick’s law計算所得到，擴散係數在電沉積硒化鋅薄膜時會影響實驗的電流密度、膜的厚度、粒徑大小。硒化鋅薄膜在光吸收性質上由於粒徑大小不同會有量子侷限效應發生造成有穿透度紅移的現象，這也造成我們利用Tauc-Sunds公式所計算出的能隙值也有紅移現象。
另一方面，隨著溫度提高在循環伏安圖上看到會有還原電位提前發生，在電化學反應機制上也有所不同，反應進行的方向不同造成硒化鋅薄膜的元素比例是有差異的。從結果觀察到製作硒化鋅薄膜在80℃時的結晶性會優於45℃以及65℃，在能隙值、晶格常數方面在80℃時也較接近理論值。這趨勢對於製作太陽能電池p-n junction方面可以減少載子重合的機率發生。

This study discussed with fabrication of zinc selenide by using eletrodeposition at various electrolytes and temperature. The diffusion coefficient of electrolytes was calculated by Fick’s law and it woule affect the current density, thickness and particle size. The films of zinc selenide had quantum confinement effect and red shift of transmittance due to the particle size, and it caused the band gap that we calculated by Tauc-Sunds equation had red shift as well.
On the other side, the reduction potential shifted more positive when the temperature raised, it also make different electrochemical reations occurred, the different reaction led the films to different proportion of element. We observed the fabrication of zinc selenide in eighty Celsius degree its crystallinity had more intense than forty-five and sixty-five Celsius degree, the value of band gap and lattice constant were more closer to theoretical value in eighty Celsius degree as well. This trend may reduce the carrier recombination to fabricate the solar cells p-n junction.

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