在本論文中，主要探討氮化鎵晶體成長於石墨烯以製作葡萄糖感測器元件，磊晶於石墨烯上特殊的氮化鎵纖鋅礦結構，其大的體表面積有效的增加接觸葡萄糖的面積以及高導電率的石墨烯以利於葡萄糖感測器的製作。
由於糖尿病是人類目前的重大疾病之一在台灣地區，於1987年起糖尿病始終高居時大死亡原因的前五名。糖尿病為終生性疾病，罹患即無法根治，控制血糖含量是唯一的治療方針，在臨床診斷上，「血糖感測器」是掌握糖尿病病情最重要的指標工具，然而醫院內大型檢測儀器有採血量多，耗時長，操作技術門檻高等缺點，病人無法在日常生活中及時的自我監測，因此攜帶性生物感測器變應運而生。氮化鎵/石墨烯的元件便可以做為葡萄糖感測器的量測，可以得到高靈敏度30.73 (μA/cm2-mM) ，反應時間很短只需要短短5 s的時間，偵測極限為0.8(mM/L)且由於穩定的氮化鎵/石墨烯元件可以在室溫下超過30天的保存時間。

此實驗運用不同的參數調變去更進一步提升氮化鎵的晶體品質以及元件特性。在此實驗中，不同以往的緩衝層例如低溫氮化鎵、氮化鋁等等，我們採用石墨烯此一中間層來當作我們的緩衝層，可以有效的幫助氮化鎵晶體在垂直方向的成長，且石墨稀利用凡得瓦爾力的鍵結方式且可轉移的特性，皆可以成長出高品質的氮化鎵晶體。最重要的是石墨烯是一個非常好的導電體，可以有效的將葡萄糖分解出來的電子訊號進行傳遞。
首先針對石墨烯的轉移作探討，由於石墨烯是利用凡得瓦爾力的鍵結所以可以轉移至任意的基板，經由拉曼光譜儀的量測可以得知石墨烯的品質及層數，經由量測可得知ID/IG = 0.54 ，顯示了石墨烯的品質是相當不錯的，而從I2D/IG = 1.19 我們可以知道此石墨烯是屬於多層的層數，這樣的結果對於我們磊晶氮化鎵是一個相當不錯的緩衝層品質。接著則是利用有機金屬氣相沉積法磊晶氮化鎵，在磊晶層成長過程，為獲得高品質的單晶磊晶層，有機金屬化學氣相沈積系統的調變參數繁多，常見的重要參數依序為成長溫度、厚度、流量、壓力、五三族原子比例、升溫速度摻雜元素及載體氣體選擇等，或採用脈衝式流量控制法、腔體內回火熱處理法、磊晶後二次回火熱處理法等，皆可以獲得高品質的磊晶層。

In this paper, it focus on the growth of gallium nitride on graphene in order to produce the glucose biosensor. In particular gallium nitride epitaxial wurtzite structure on graphene have a large surface area to contact the glucose. High conductivity graphene also have the superior property to produce the glucose biosensor.
Diabetes is one of the top major five human diseases which cause the many deaths in Taiwan from 1987. Diabetes is lifelong disease that could not be cured. Controlling the blood sugar is the only treatment in clinical diagnosis. Therefore, glucose biosensor is developed to maintain the diabetic condition tool which is important index. However, the hospital has the shortcomings such as a larger volume of blood, more time-consuming operation and higher technical threshold by testing equipment. The patient unable to timely self-monitoring every day, so portable glucose biosensor come into being developed. GaN/graphene device could be applied as glucose sensor at the first time and have high sensitivity (30.73μA/cm2_ mM), low response time (5s), detection time (0.8 mM) and long storage time(over 30 day). Non-enzymatic glucose sensors based semiconductor materials (GaN), which are chemically and thermally stable.
The different modulation parameters to further enhance the crystal quality and device properties. In this experiment, we use the graphene to replace the earlier buffer layer such as low temperature gallium nitride, aluminum nitride, etc. Graphene intermediate layer could effectively could be used to help the growth of gallium nitride in the vertical direction. Furthermore, the lattice mismatch could be ignored because graphene is bonded by the van der waals force, which is able to grow high quality gallium nitride crystals. The most important is that graphene is a very good conductor and can play the role to transfer the electrical signal produced from the glucose.
First of all, we investigated the graphene transfer quality. Due to the van der waal property, graphene could be transferred to arbitrary substrate. Then, Raman Spectroscopy could displayed the graphene quality and layers. It could be measured that ID/IG = 0.54 showed the quality is quite good, and I2D/IG = 1.19 showed graphene is multilayer. This result is a pretty good for the growth of gallium nitride to apply as the intermediate layer. Next is the growth of gallium nitride by the Metal Organic Vapor Deposition (MOCVD). In order to get the high quality crystals, many modulation parameters have been made. The commonly important parameters, such as growth temperature, thickness, flow, pressure, V/III ratio, heating rate, carrier gas, pulse flow control method, heat treatment chamber, and epitaxial after the second heat treatment method, etc…, all could get high quality epitaxial layer. Finally, the GaN/graphene structure was used to measure the concentration of glucose and a linear relation was found. During this work, it is the first time that GaN/graphene was proved can be used to measure the glucose.

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