本論文工作是使用離子束濺鍍系統成長﹝CuOx (20 Å) / Co (1 Å)﹞25 多層膜。實驗分為兩部份，第一部份是改變氧壓成長多層膜，第二部份是將多層膜作高真空退火處理，改變樣品中CuO和Cu2O比列，研究此多層膜磁電性及結構特性。

　　由SQUID量測多層膜磁性，顯示樣品有室溫的鐵磁性，氧壓最大(P(O2) =2.3x10-4 torr)及退火到400°C時樣品則呈現反磁性。Cu及Co的吸收光譜(包含XANES及EXAFS)發現CuOx的結構隨著氧壓及退火溫度不同有所改變，價數都是介於一、二價之間，然而Co的價數都呈現二價，在樣品中有類似CuO的局域結構，表示Co取代了CuOx中的Cu(Ⅱ)。磁性產生的原因仍待進一步確認。

　In this study, we deposited﹝CuOx (20 Å) / Co (1 Å)﹞25 multilayers on Al2O3(0001) substrate by an ion beam sputter. We change the CuO/Cu2O ratio by varying oxygen pressures in thin film growth and using post-growth high-vacuum annealing. We study the magnetism, electrical properties, and structure of the films.

　The results of RT ferromagnetism have been observed except for over oxygen pressure (P(O2) =2.3x10-4 torr) and over-annealed 400°C samples. The Cu K-edge XANES and EXAFS spectra reveal that the valence and structure are different under various oxygen pressure and annealed temperature. However, Co remains divalent in all the films and the local structure of Co is similar to CuO . The origin of ferromagnetism remains to be answered.

第一章
[1] Y. Kato, R. C. Myers, A. C. Gossard & D. D. Awschalom, Nature, 427, 50(2004)
[2] 戴振益、黃榮俊, [Fe3O4/ZnO]n 多層膜及退火膜結構與磁性之研究，
成大物理碩士論文(2004)
[3] 國立臺灣大學物理學系，楊鴻昌教授，科儀新知，第
十二卷第六期， 72-79(1991)
[4] Dietl, T., Semicond. Sci. Technol. (2002) 17 (14), 377
[5] T. Dietl and H. Ohno, MRS Bull. 28, 714 (2003)
[6] Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura,
M.Kawasaki,P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma,
Science291, 854 (2001).
[7] J. C. A. Huang, H. S. Hsu, Y. M. Hu, C. H. Lee, Y. H. Huang,
and M. Z. Lin , Appl.Phys. Lett. 85, 3815 (2004)
[8] Prinz, Gary A., Science, 282, 5394, p.1660 (1998)
[9] S. J. Pearton ect. J. Appl. Phys. 93, 8979 (2003)
[10] M. Ivill, M. E. Overberg, C. R. Abernathy, D. P. Norton, A. F. Hebard,
N. Theodoropoulou, J. D. Budai, Solid-State Electronics,
47 (2003) 2215-2220
[11] S. N. Kale, S. B. Ogale, S. R. Shinde, ect. Appl. Phys. Lett.82, 210(2003)
[12] S. G. Yang, T. Li, B. X. Gu, and Y. W. Du, etc. Appl. Phys. Lett. 83, 3746 (2003)
[13] M. Wei, N. Braddon, D. Zhi, P. A. Midgley, ect., Appl. Phys. Lett.
86, 2514-1(2005)
[14] Liqing Pan, Hao Zhu, ect., J. Appl. Phys. 97, 10D318-1(2005)
[15] A. Kamimski and S. Das Sarma, Phys. Rev. Lett. 88, 247202-1 (2002)
[16] Hongming Weng, Xiaoping Yang, ect. Phys. Rev. B. 69, 125219 (2004)
[17] Li. J. Vizkelethy, G.. Revesz, R. Mayer, etc., J. Appl. Phys.69,1020(1991)

第二章
[1] M. G. Smith, R. D. Taylor, M. P. Pasternak, and H. Oesterreicher,
Phys. Rev. B 42,2188 (1990).
[2] X. G. Zheng, C. N. Xu, E. Tanaka, Y. Tomokiyo, M. Suzuki, and E. S. Otabe,
Physica C 357-360 (2001) 181-185.
[3] J. B. Forsyth, P. J. Brown, and B. M. Wanklyn, J. Phys. C 21, 2917 (1988).
[4] B. X. Yang, T. R. Thurston, J. M. Tranquada, and G. Shirane, Phys. Rev. B
39, 4343(1989).
[5] T. I. Arbuzova, A. A. Samokhvalov, I. B. Smolyak, et al.
J. Magn. Magn. Mater. 95,168 (1991)
[6] T. Shimizu, T. Matsumoto, A. Goto, and T. V. Chandrasekhar Rao ,
Phys. Rev. B 68,224433 (2003).
[7] M. O.Keeffe and F. S. Stone, J. Phys. Chem. Solids 23, 261 (1962).
[8] X. G. Zheng, C. N. Xu, E. Tanaka, Y. Tomokiyo, H. Yamada, Y. Soejima,
Y.Yamamura, and T. Tsuji, J. Phys. Soc. Jpn. 70, 1054 (2001).
[9] A.Werner, and H. D. Hochheimer, Phys. Rev. B, 25,5929 (1982).
[10] Pierson J F, Thobor-Keck A, and Billard A, Appl. Surf. Sci.210,359-6(2003)
[11] Y. R. Ryu, S. Z. Hu, etc. J. Cryst. Growth 216, 330 (2000)
[12] D. Snoke, Science 298, 1368 (2002)
[13] S. B. Ogale, P. G. Bilurkar, and etc., J. Appl. Phys. 72, 8 (1992)
[14] A. Kaminiski and S. Das Sarma, Phys. Rev.Lett. 88, 247202 (2002).
[15] Hongming Weng, Xiaoping Yang, etc., Phys. Rev. B 69, 125219 (2004)
[16] J. M. D. Coey, J. Appl. Lett. 97, 10D313 (2005)
[17] M. Venkatesan, C. B. Fitzgerald, and J. M. D. Coey, Nature, 430,630 (2004)

第三章
[1] 戴振益、黃榮俊, [Fe3O4/ZnO]n 多層膜及退火膜結構與磁性之研究，
成大物理碩士論文(2004)
[2] 國立臺灣大學物理學系，楊鴻昌教授，科儀新知，第十二卷第六期， 72-79(1991)
[3] D. C. Koningsberger and R. Prins, X-ray Absorption principles,
applications, techniques of EXAFS, SEXAFS and XANES, pp.574-575(1988)
[4] J. J. Rehr and R. C. Albers, Rev. Mod. Phys.72, 621(2000)

第四章
[1] J. F. Pierson, A. Thobor-Keck, A. Billard, Appl. Surf. Sci.
210 (2003) 359-367.
[2] N. Nacheva, P. Docheva, and M. Misheva, Mater. Lett. 39 (1999) 81-85.
[3] T. C. Kaspar, T. Droubay, C. M. Wang, ect., J. Appl. Lett.97,073511 (2005)
[4] M. Grioni, J.F. van Acker, M.T. Czyzyk, and J.C. Fuggle, Phys. Rev. B 45,
3309(1992)
[5] S. L. Hulbert, B. A. Bunker, and F. C. Brown, Phys. Rev. B 30, 2120 (1984)
[6] G. van der Laan , and etc., Phys. Rev. B, 66, 045104 (2002)
[7] R. A. D. Pattrick, G. van der Lann, and etc., PHYs. Chem. Miner. 20,
395 (1993)
[8] F. M. F. de Groot, M. Grioni, and J. C. Fuggle, etl. Phys. Rev. B 40,
5715 (1989)
[9] Yasushige Kuroda, Ryotaro Kumashiro, Mahiko Nagao, Appl. Surf. Sci.196,
408-422 (2002)
[10] Y. Shutthanandan, S. Thevuthasan, and etc., Appl. Phys. Lett.84,4466(2004)
[11] Y. L. Soo, G. Kioseoglou, S. Kim, and Y. H. Kao, Appl. Phys. Lett. 81,
655 (2002)
[12] J. C. A. Huang, H. S. Hsu, Y. M. Hu, C. H. Lee, Y. H. Huang,
and M. Z. Lin , Appl. Phys. Lett. 85, 3815 (2004)
[13] S. N. Kale, S. B. Ogale, S. R. Shinde, ect. Appl. Phys. Lett.82,2100(2003)
[14] K. A. Griffin, A. B. Pakhomov, and ect., Phys. Rev. Lett.94,157204 (2005)
[15] N. Nancheva, P. Docheva, M. Misheva, Materials Lett. 39 (1991) 81-85
[16] J. C. Mikkelsen, Jr. and J. B. Boyce, Phys. Rev. B, 28, 7130 (1983)
[17] 周雄、吳俊斌，『錳矽氧化物之低磁場磁阻研究』，26期4卷2004年8月 p.581
[18] Prasanna Shah and Ajay Gupta, Phys. Rev. B 45, 483 (1992)
[19] J. M. D. Coey and etc., Nature Materials, 4, 173 (2005)