單壁奈米碳管擁有許多卓越的電性及機械性質，因此吸引許多研究奈米相關學者的興趣，但若要將其運用在電子元件的製作上往往需要許多複雜的製程，因此在其應用上的進展趨於緩慢。本研究提供一種可製作高純度單壁奈米碳管的方法，將其成長成薄膜，以相關儀器分析此薄膜的各種性質，並利用簡易的半導體製程將之製作成場效電晶體，透過直流電性量測評估此元件的特性。在本研究中所使用的成長方法是酒精催化化學氣相沈積系統，此方法利用安全的酒精氣體作為碳源，可得到高純度的單壁奈米碳管。一般而言，影響碳管成長的主要因素為成長時之溫度、壓力與時間，因此，在研究初期透過不同的實驗參數設定，找出可大面積穩定成長的條件，分析觀察不同的實驗參數所對單壁奈米碳管性質造成的影響，作為後續元件製程的參考。
在元件的製程及特性分析方面；由於使用的製程機台與技術能力限制，本研究先行設計較大通道尺寸的上閘極模式場效電晶體，並採用高介電常數的薄膜作為閘極氧化層，成功的製作出以單壁奈米碳管薄膜做為電子通道的場效電晶體。針對不同元件尺寸分析，所有元件之特性皆為n型電晶體，且通道的長度與寬度會影響元件的特性。在元件量測分析中發現最佳的元件開關電流比約為104-105，最大電流可達10-5A，且電子移動率達239.68 cm2/Vs，相較目前常見以n型摻雜多晶矽做為電子通道的薄膜電晶體，其電子移動率約為1-10 cm2/Vs，單壁奈米碳管電晶體的電子移動率顯然高出許多。相信透過未來的研究發展及改良，此種新型的半導體材料將可取代目前的材料，而將奈米電子元件的發展帶入更穩定、更快速的境界。

This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) networks on oxide/silicon substrate using alcohol as the carbon source gas. The nano-size catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Analytical instruments are used to demonstrate that this as-grown SWNTs film has very uniform, stable n-type semiconductor property and does not change with time during growth. For advanced application of electronic devices with this thin film, methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. The SWNTs thin film can be patterned successfully by photolithography and reactive ion etching process. Finally, fabrication and characteristic measurements of a field-effect transistor (FET) using this SWNT thin film are also demonstrated. The research has succeeded in fabricating thin film transistors using a semiconductor single-walled carbon nanotubes thin film as the active electronic material. The optimal SWNTs TFT achieved a mobility of 239.68 cm2/Vs and a normalized transconductance of 0.28 mS/mm. These values compare favorably to those observed in amorphous-Si TFTs whose mobility is 1 cm2/Vs and transconductance is 0.01 mS/mm are more typical. The result indicates that single-walled carbon nanotubes thin film has good electronic properties and can be readily applied in the processing of many other electronic devices.

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