散熱目前是高功率綠光發光二極體 (LEDs) 發展與應用中最重要且急需解決的問題。我們使用一種新的封裝技術，將銅直接電鍍於LEDs晶片的底部，製作一體成型的金屬散熱座，以解決傳統封裝技術散熱不佳的問題。由於傳統的LEDs晶片使用膠固定在印刷電路板 (PCB) 上，系統串聯的熱阻非常大導致LEDs晶片封裝後散熱不佳，在高功率操作下，晶片容易燒毀。運用新的封裝技術，LEDs 晶片與金屬散熱座可以直接接合，晶片不需要膠就可以直接固定在散熱座上，使得系統串聯電阻遠小於傳統封裝結構。由實驗的結果顯示，同樣的晶片使用傳統的封裝方式，操作電流由350 mA加大到950 mA就會燒毀，而新式封裝方式的LEDs卻可以穩定地操作在1050 mA。不僅如此由實驗數據顯示，在350 mA與900 mA時，新式封裝方式的LEDs 也比傳統式封裝的LEDs ，亮度分別提高了69%與84%。

Heat dissipation is now a critical problem for applications of high power green light emitting diodes (LEDs). Copper is plated on the GaN-based green LED chip directly, and the thermal resistance from chip to the metal heat sink is decreased observably. With the copper plating layer, the working current of the GaN-based green LED can be increased from conventional 350 mA to 1050mA in room temperature. It was found that the luminous intensity at 350 and 900 mA of the novel package LEDs showed 69% and 84% enhancement as compared with that of the conventional package ones.
In this study, the electrical and optical characteristics of GaN-based green LEDs with direct copper plating were discussed.

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