實驗分為兩個部分，第一，利用氫原子蝕刻三維拓樸絕緣體硒化鉍薄膜的方式，在表面形成二維拓樸絕緣體雙層鉍(111)結構。第二，進一步將錫蒸鍍於雙層鉍/硒化鉍系統，成長出單層二維拓樸絕緣錫烯。秀過量子穿隧顯微鏡(STM)以及角分辨光電子能譜(ARPES)，分析其成長機制、能帶及表面結構。
在雙層鉍部分，量子穿隧顯微鏡觀察到在不同通量氫原子蝕刻的變化過程，最終在硒化鉍表面生成雙層鉍(111)，在能帶結構上也與理論計算相符。
在錫烯部分，成功把錫烯成長在雙層鉍/硒化鉍系統，從量子穿隧顯微鏡觀察到蜂巢狀的結構。

The experiment include two parts, First, two dimensional Bi(111) bilayer (BL) are prepared on Bi2Se3 by hydrogen atom etching. Secondly, further deposit tin on Bi BL/Bi2Se3 to grow two dimensional stanene. Scanning tunneling microscope (STM) and angle-resolved photoemission spectroscopy (ARPES) were used to analyze the etching mechanism and its band structure.
For Bi BL, we observed the revolution process with varied hydrogen dosing by STM and eventually form a sigle bismuth (111) bilayer on Bi2Se3.
Regarding stanene, we successfully grew the stanene on BL/ Bi2Se3 ,the honeycomb structure observed by STM strongly support our finding.

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