由於快速的工業化和半導體製造的發展，CMOS技術的演進不僅只是依靠微縮元件的能力，還需要引進創新的元件架構和奈米材料。

石墨烯為單原子層的石墨，屬於一種二維結構的材料，擁有出色的載子遷移率以及場效特性，這些特性讓石墨烯在電子元件的應用上，成為熱門的研究材料，然而，石墨烯本身為零能隙，不像一般的半導體具有足夠的能隙，因此，以零能隙的材料為基礎，新穎的電晶體或者是新型元件結構的研究也相繼被許多研究團隊提出，而由於雙層石墨烯本身特殊的電子能帶，提供元件製作上的一個可能性。

在這篇論文中，我們會著重在利用化學氣相沉積法來合成大面積的雙層石墨烯，此外，我們會利用電子束微影來製作雙層石墨烯場效電晶體，並配合自我對準閘極技術，再者，利用電子束微影來製作鋁閘極，藉由高純度氧氣來氧化使其形成自生氧化鋁，更重要的是，在常溫常壓下的環境，我們分析雙層石墨烯的自我對準閘極場效電晶體的電特性。

Due to the fast pace of industrialization and the development of semiconductor manufacturing, the progress of semiconductor technology not only depends on the capability of scaling down the device dimensions, but also requires the introduciotn of innovative device architectures and nano-materials. In this thesis, we demonstrate the synthesis of high-quality bilayer graphene by CVD, and present a facile process for bilayer graphene field effect transistors with self-aligned source/drain contacts.

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