奈米線蝕刻(Nanowire lithography)是一種利用一維奈米材料像是金屬奈米線、生物高分子及奈米碳管等來定義蝕刻遮罩的圖案，並以此製作出一維奈米結構的技術。在本研究中，我們利用DNA奈米束陣列於鍍有銀及氮化矽(或是氧化矽)的矽基板上定義線寬，接著再形成自組裝單分子層(self-assembled monolayers; SAMs)，並以一連串的蝕刻製程於矽基板上製作出線性奈米結構，其中將針對可能影響製程的參數如DNA溶液濃度、μCP(microcontact printing)接觸時間及蝕刻條件等作探討。由實驗結果得知，所得到的金屬奈米溝槽陣列其寬度約為120 nm。在利用氮化矽(Si3N4)作為遮罩材料時，以RIE(reactive ion etching)蝕刻氮化矽的過程中銀溝槽會受破壞而變寬，進而使所得到的矽溝槽寬度變寬，其寬度約為200 nm或800 nm。利用氧化矽(SiOx)作為遮罩材料時，雖然銀溝槽的寬度在蝕刻氧化矽時不會受到影響，但濕蝕刻的製程使得氧化矽溝槽的寬度變寬，最終所得到的矽溝槽的寬度約為800 nm。

Nanowire lithography (NWL) is a technique used for fabrication of 1-D nanostructures where the linewidth on the mask is defined by 1-D nanomaterials such as metallic or inorganic nanowires, biopolymers, carbon nanotubes, and so on. In this study, we utilize the aligned and ordered DNA nanostrands to define the linewidth on a silver thin film deposited on the nitride (or oxide)/silicon substrate, followed by applying the self assembled monolayer. The line structures are then transferred to silicon substrate through a series of etching processes. Various processing parameters such as DNA solution concentration, contact time of microprinting, etching conditions were investigated. It is found that the average width of the silver trench is around 120nm. When using the nitride as the masking material, the silver trench is widened by the reactive ion etching process which is intended for etching the nitride layer. The average width of the silicon trench obtained then becomes larger, around 200 nm or 800 nm. When using the oxide as the masking material, although the width of the silver trench is preserved, the width of the oxide trench becomes larger, resulting from undercut during the wet etching process. This leads to a wider silicon trench with width around 800 nm.

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