本論文中我們以分子束磊晶系統（MBE）在半絕緣的砷化鎵（GaAs）基板上成長一系列硒化鋅（ZnSe）為主的二六族化合物半導體材料，並利用光激發螢光頻譜（PL）與X-ray繞射量測來檢驗磊晶品質。接著我們以不同組成、不同厚度的片子來製作一系列的金半金光檢測器，其中並包含不同的指寬與指距的設計，而且進一步地比較其中差異對元件特性的影響。
以硒化鋅製作的光檢測器，因為與基板有0.27％的晶格不匹配，所以在接面處產生許多缺陷與差排，這直接影響到元件之光響應度。接著我們以硫硒化鋅（ZnSSe）來製作光檢測器，可是並沒有因較匹配的晶格常數而提高其光響應度。最後我們成功地在砷化鎵基板上成長了高品質的硫碲硒化鋅（ZnSTeSe），以其製作金半金光檢測器，在偏壓為3伏特且沒有抗反射層的情況下最高的光響應度是0.4A/W。

In this thesis, the II-VI ZnSe-based compound semiconductors were all grown on semi-insulated (SI) GaAs substrates by molecular beam epitaxy (MBE) method. The crystal quality of the sample was investigated by used of photoluminescence (PL) and X-ray diffraction analyzer. These fabricated ZnSe-based metal-semiconductor-metal (MSM) photodetectors were compared with different parameters, including composition ratio, finger width/spacing, and thickness of absorption layer.
We found that a lot of defects and dislocations produced at ZnSe/GaAs interface (0.27% lattice mismatch) were resulted in degradation of responsivity of the ZnSe MSM photodetector. Although ZnSSe epilayer with smaller lattice mismatch was also grown on GaAs substrates, the responsivity of fabricated ZnSSe MSM photodetector was not improved. Therefore, high-quality quaternary ZnSTeSe epitaxial layers were grown on GaAs substrate successfully, and the responsivity of the ZnSTeSe MSM photodetector was about 0.4 A/W under 3 V reverse bias without any antireflection coating.

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