現今電子封裝產業利用多層互連結構，提高電子元件中積體電路的密度，以滿足產品輕薄化的需求，在此趨勢下，相異材料界面因為溫度或吸濕造成膨脹或縮收不匹配進而發生脫層，成為關鍵的失效原因之一。在扇出型晶圓級封裝中，高分子薄膜作為介電層的使用廣泛，彰顯了高分子材料與高分子材料界面以及高分子材料與金屬材料界面可靠度的重要，本論文的探討的目標為實際封裝尺度下之聚醯亞胺薄膜與環氧樹酯封膠界面以及聚醯亞胺薄膜與銅薄膜界面，在破壞力學的理論基礎上對界面脫層進行分析，應用雙懸臂樑方法量測界面破壞韌性，得到臨界應變能釋放率，且考慮試件準備與高溫高濕環境老化對界面強度的影響。實驗結果得到聚醯亞胺與環氧樹酯封膠界面以及聚醯亞胺與銅薄膜界面的臨界應變能釋放率，並發現當聚醯亞胺與環氧樹酯封膠界面經過吸濕老化過後，其測得之臨界應變能釋放率會小於未吸濕老化的界面。

The interfacial fracture toughnesses of the polyimide (PI)-Cu and PI-epoxy molding compound (EMC) in fan-out wafer-level packaging (FOWLP) were measured by using a Mode-I Double Cantilever Beam (DCB) fracture test. In this evaluation, a universal testing machine was applied to slowly stretch the double cantilever beam. Simultaneously, the load and the opening displacement of the DCB specimen were obtained by the load cell and the clip-on extensometer, respectively. The crack length and the critical strain energy release rate are calculated by using an analytical formula based on the beam-on-elastic-foundation theory [1] and compliance method. The critical strain energy release rate, also referred to as the fracture toughness, can be used as a reference for evaluating the reliability of the interface in electronic packages to avoid delamination failure. Additionally, the critical strain energy release rate before and after moisture pre-conditioning was also compared to quantify the adhesion degradation due to moisture absorption.

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