隨著微電子工業發展及快速進步速度的趨勢下，各項製程技術的研究也就愈重要，採用模擬方法可以改善設備，減少成本與時間的花費，在半導體製程中電漿增強化學氣相沉積是個重要設備，本研究是以數值方法探討電漿增強化學氣相沉積(PECVD)沉積時，反應器內的流場之現象，在數值模擬方法上，描述PECVD反應器流場傳輸現象的統御方程式。
本研究就PECVD 技術之單一晶元片式(single wafer)反應器流場分佈狀態進行分析，比較各種幾何形狀的噴氣頭，對流場均勻性的影響。反應中採用冷壁式(cold wall)反應器腔體之流場，假設空間為2維。除此之外，在本論文也有討論噴氣頭擋板對流場的影響。最後，將噴氣頭比擬成多孔性介質，找出其滲透性和阻力系數，使其成為等效流場，以便日後運算3維流場可以減少大量的網格運算，且更接近真實情況。

With the rapid progress in microelectronics industrial development and the trend rate, the study of process technology the more important, the use of simulations to improve facilities, reduce costs and time spent in the semiconductor manufacturing process for plasma enhanced chemical vapor deposition is an important device, this study used the numerical method of plasma enhanced chemical vapor deposition (PECVD) deposition, the reactor flow field phenomenon, the numerical simulation method, described in PECVD reactor flow governing transport phenomena equation.
In this study, PECVD technology on a single wafer type reactor flow distribution analysis and comparison of various geometrical shapes of showerhead, the flow field uniformity of the reaction in with the cold wall reactor chamber body flow fields, assuming a 2-dimensional space, and the flow field of the board, and finally, the showerhead match into porous media, to identify its permeability and drag coefficient, making it the equivalent flow in order to future computing three-dimensional flow field can reduce the number of grid computing, and more close to reality.

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