本論文旨在研製應用於3.1~3.5 GHz頻帶無線區域網路(WLAN)之PHEMT微波功率放大器。

　　在本論文中，我們探討了各項設計微波功率放大器所需的基本理論，以及電路的相關設計方法。依照系統的需求，我們訂定了功率放大器的設計目標為: 3.1 ~ 3.5 GHz的應用頻段、30 dB的小信號增益、30 dBm的P1dB增益壓縮點輸出功率、輸出入損耗在-15 dB以下;其中，選擇的偏壓點是屬於A 類操作的15 V – 800 mA。在輸出功率匹配方面，我們選擇了使用負載線理論方法(Cripps Method)，利用負載線理論的方式來找出最佳輸出阻抗，藉由匹配此負載阻抗並兼顧返回損耗以得最佳的輸出功率。以及電晶體的小信號模型去完成輸出匹配電路的設計在偏壓電路，我們選擇單偏壓電源結構。量測結果 3.1~3.5 GHz增益為 31.96 dB - 32.2 dB， 3.1-3.5 GHz輸出功率為 30.5 dBm - 30.7 dBm，Input Return Loss皆在 -17 dB以下，Ontput Return Loss 皆在 -16 dB以下。最後，我們比較了量測結果、模擬結果以及設計規格。

　　本論文所製作的微波功率放大器，量測結果證實能使用在3.1~3.5 GHz頻帶的無線區域網路的應用之中。

　　The main objective of this essay is to design and manufacture PHEMT microwave power amplifier for WLAN of 3.1~3.5 GHz application.

　　In this essay, a variety of basic theories related to the design of microwave power amplifiers and methodologies of electric circuit design are proposed and discussed. Basic specifications of the power amplifier are: the range of operation frequency of 3.1 ~ 3.5 GHz, the small-signal gain of 30 dB, the P1dB compression point output power of 30 dBm, and the input/output return loss is below -15dB. It is noted that the bias scheme of the power amplifier uses a single-bias configuration of 15 V – 800 mA design and it is essential a type-A amplifier. GaAs PHEMT was employed in the circuit implementation.

　　In this work, the Load Line Approximation Method (Cripps Method) was used for the output power matching. Circuit simulation based on a small-signal model of PHEMT transistor was conducted to optimize the output match circuit. A power amplifier suitable for WLAN (3.1~3.5 GHz) application has been successfully implemented. The measured performances of the power amplifier operated in the frequency range of 3.1~3.5 GHz are: the gain is 31.96 dB - 32.2 dB, output power is 30.5 dBm - 30.7 dBm, input return loss is below -17 dB, and output return loss is below-16dB.

　　Experimental results show that the microwave power amplifier implemented in this study behaves quite well on the application of WLAN of 3.1~3.5 GHz.

[01] T. H. Lee, “The Design of CMOS Radio-Frequency Integrated
Circuit,” Cambridge University Press, 1998.
[02] B. Razavi, “RF Microelectronics,” Prentice-Hall, 1997.
[03] Guillermo Gonzalez, “Microwave Transistor Amplifiers
Analysis and Design ” Prentice Hall Inc, New Jersey, 1996.
[04] Peter Vizmuller, “RF Design Guide System, Circuit and Equations,” Artech House Inc, Boston, 1995.
[05] Ravender Goyal editor, “Monolithic Microwave Integrated
Circuits: Technology & Design,” Artech House Inc.
[06] Lawrence E. Larson, “ RF And Microwave Circuit Design
for Wireless Communication,” Artech House Inc, Boston, 1996.
[07] Jack Smith, “Modern Communication Circuits,” McGraw Hill
Inc, New York, 1985.
[08] P. R. Gray and R. G. Meyer, “Analysis and Design of
Analog Integrated Circuits,” Second Edition. New York, 1984.
[09] Steve C.Cripps, “RF Power Amplifier for Wireless Communications, ” Artech House, 1999.
[10] 嚴呈機,2.4GHz ISM頻帶收發機射頻前端CMOS RFIC及使用二極 體線性器
CMOSPA之研製,國立成功大學電機工程研究所碩士論文,民國九十一年.
[11] 陳宜隆,5.7GHz UNII頻帶無線通訊之MMIC功率放大器及射頻收
發模組之設計製作,國立成功大學電機工程研究所碩士論文,民國
九十年.
[12] 林信雨,應用在無線通訊之2.4GHz低雜訊/功率放大器型主動微帶天線的設計,國
立成功大學電機工程研究所碩士論文,民國八十五 年.
[13] L.D. Abrite, “Design of RF and Microwave Amplifier and Oscillators,” Artech House Inc, 1999.
[14] K. Yamamoto, T. Moriwaki, T. Fujii, J. Otsuji, M. Miyashita, Y.
Miyazaki and K. Nishitani, “A 2.4 GHz high efficiency SiGe HBT
power amplifier with high-Q LTCC harmonic suppression filter,” IEEE Journal of Solid-State Circuits, Vol. 34, No.4, April 1999, pp.502 –512.
[15] E. Chen ,D. Heo ,M. Hamai ,J. Laskar and D. Bien “0.24-um CMOS
technology for Bluetooth power applications,” Radio and Wireless
Conference. Sept. 2000, pp. 163 -166
[16] G. Gonzalez, “Microwave Transistor Amplifiers Analysis and
Design,” Prentice Hall Inc, New Jersey, 1996.
[17] P. H. Ladbrooke, “MMIC Design GaAs FETs and HEMTs,” Artech
House, MA,1989.
[18] H.J. Siweris, A. Werthof, H. Tischer and U. Schaper, “Low-cost GaAs
PHEMT MMIC ’s for millimeter-wave sensor applications,” IEEE
Trans.Microwave Theory and Techniques, vol.46, pp. 2560 ~ 2567, December 1998.
[19] Atila Mertol, “Estimation of Aluminum and Gold Bond Wire
Fusing Current and Fusing Time,” IEEE Trans. on Components,
Packaging, and Manufacturing Technology, Part B, vol.18, No.1, pp. 210-214, Feb 1995.
[20] Howard Patterson, “Analysis of Ground Bond Wire Arrays for
RF ICs,” IEEE Radio Frequency Integrated Circuit Sym, vol.34,
pp.237-240, 1997.
[21] Marian K. Kazimierczuk and Krzysztof Puczko, “Exact Analysis
of Class E Tuned Power Amplifier at any Q and Switch Duty Cycle,” IEEE Trans. On Circuits and Systems, vol. CAS-34, pp.
149-159, Feb 1987.
[22] D.K. Shaeffer and T. H. Lee, “A 1.5-V 1.5GHz CMOS Low Noise Amplifier,” IEEE J. of Solid-State Circuit, vol.32, No.5, pp.745-
759,May 1997.
[23] A. A. Abidi, “Direct-conversion radio transceivers for digital Communications,” IEEE J. of Solid-State Circuit,vol. 30,
pp. 1399-1410,Dec 1995.
[24] 李亮輝, 802.11a WLAN 接收機射頻系統規劃與5GHz CMOS差動 LNA/Mixer之設
計,國立成功大學電機工程研究所碩士論文,民國九十一年.
[25] C. Lam and B. Razavi, “A 2.6-GHz/5.2-GHz frequency synthesizer in 0.4- m m CMOS technology,” IEEE J. of Solid-State Circuits, vol. 35,No.5, pp. 788-794, May 2000.
[26] R. Anholt and S. Swirhun, “Equivalent-circuit parameter extraction
for cold GaAs MESFET’s, ” IEEE Trans. Microwave Theory and Tech.,vol. MTT-39, pp. 1243-1247, July 1991.
[27] C. Camacho-Penalosa and C.S. Aitchison, “Modelling frequency
dependence of output impedance of a microwave MESFET at low
frequencies, ” Electron. Lett. Vol. 21, pp. 528-529, June 6, 1985.
[28] E. Chen, D. Heo, M. Hamai, J. Laskar and D. Bien “0.24-um CMOS
technology for Bluetooth power applications,” Radio and Wireless
Conference. RAWCON IEEE , 10-13 Sept. 2000, pp. 163 -166
[29] B. Gilbert, “A New Wide-band Amplifier Technique,”
IEEE Journal of Solid-State Circuit, Dec. 1968.