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研究生： 余人皓
Yu, Ren-Hao
論文名稱： (BaTiO3/BaSnO3)n多層膜結構對BaTiO3薄膜結構和電性影響之研究
Characterization of BaTiO3 in (BaTiO3/BaSnO3)n multilayers
指導教授： 洪敏雄
Hon, Min-Hsiung
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2009
畢業學年度： 97
語文別： 中文
論文頁數： 101
中文關鍵詞： 居里溫度 、應變 、多層膜
外文關鍵詞： non-uniform strain, Curie temperature, BaTiO3, multilayers
相關次數： 點閱：108  下載：2 
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    • 本研究利用射頻磁控濺鍍法在Pt/Ti/SiO2/Si的基板上交疊沉積(BaTiO3/BaSnO3)n 多層膜，藉由沉積時所產生的應力和材料間熱膨脹係數不同所產生熱應力，而這些應力作用在多層膜間產生應變，進而探討應變對於多層膜的結晶性、表面形貌和電性之影響。
    實驗結果顯示，BaTiO3單層膜經過600 ℃以上熱處理10 min，可得正方晶結構，而多層膜則需更高的溫度才會有結晶的出現，可能是受到層間應力影響，致使晶粒微細。
    薄膜疊層會引起較大應力，當堆疊4層時，薄膜表層厚度約60 nm，此時表面會出現裂縫。在總厚度不變的前提下，隨堆疊層數增加，表面層厚度減少，反而可維持高應力而沒有裂縫生成。
    經由電滯曲線之量測，發現單層BaTiO3的居里溫度約為120 ℃，但多層結構在10 ℃的低溫下仍呈現順電性，代表多層技術可能降低居里溫度至室溫以下。經過C-V和I-V量測後，發現多疊層數2層時，擁有較高的介電常數和較低的漏電流密度。

    In this study, (BaTiO3/BaSnO3)n multilayers are prepared by RF magnetron sputtering on Pt/Ti/SiO2/Si substrate. Structure of crystallization, surface morphology and electric properties are characterized as function of non-uniform strain which caused by depostition and thermal stress.
    The results show that the structure of BaTiO3 thin film annealed above 600 ℃ for 10 min is perovskite tetragonal structure, but the crystal of multilayers find as annealed at a higher temperature should be caused by tiny grain size induced by strain. Crevices are found on the top layer for a 4 layers structure which maybe caused by internal stress. However, a thinner top layer can avoid crevices formation at high stress level.
    By P-E measurement, the Curie temperature of BaTiO3 thin film is about 120 ℃. However, the Curie temperature of multilayers is lower than 10 ℃ because it shows paraelectric property at 10 ℃.

    摘要 I Abstract II 致謝 III 總目錄 IV 圖目錄 VIII 表目錄 XII 第一章 緒論 1 1-1 前言 1 1-2 研究背景與目的 2 第二章 理論基礎 8 2-1 介電質對電容的影響 8 2-2 介電材料極化性質 9 2-3 介電特性 13 2-3-1 順電性材料 13 2-3-2 強電性材料 13 2-4 鐵電性和晶域結構 14 2-4-1 鐵電現象基本特性 14 2-4-2 介電特性受晶域之影響 16 2-5 鈦酸鋇晶體結構及特性 19 2-6 錫酸鋇的晶體結構及特性 21 2-7 電極材料對薄膜性質的影響 24 2-8 濺鍍理論 24 2-8-1 何謂濺鍍 24 2-8-2 射頻濺鍍 25 2-8-3 磁控濺鍍 25 2-9 薄膜沉積原理 29 2-9-1 沉積現象 29 2-9-2 鍍層微結構的Thornton模型 31 2-10 退火對材料之影響 33 2-11 薄膜應力 35 2-11-1 應力的種類 35 2-12 結晶粒之大小與不均勻應變所生繞射線寬化 37 第三章 實驗方法與步驟 40 3-1 實驗流程圖 40 3-2 實驗系統說明 41 3-3 實驗原料 44 3-4 靶材製作 45 3-4-1 鈦酸鋇靶製備 46 3-5 薄膜沉積 46 3-5-1 Pt/Ti/SiO2/Si基板之製備 46 3-5-2 基板準備 49 3-5-3 沉積步驟 49 3-5-4 退火處理 50 3-6 性質分析與量測 50 3-6-1 晶體結構分析 50 3-6-2 薄膜表面和截面分析 52 3-6-3 縱深分析 52 3-6-4 電性量測 52 第四章 結果與討論 55 4-1 靶材性質 55 4-2 製程參數對薄膜沉積速率和結構的影響 55 4-2-1 濺鍍功率 55 4-2-2 氧分率 58 4-3 薄膜晶體結構分析 60 4-3-1 BaTiO3單層膜 60 4-3-2 (BT/BS)n多層膜 65 4-3-2-1 結晶粒之大小與不均勻應變所生繞射線寬化 67 4-4 薄膜表面和截面觀察 73 4-4-1 BaTiO3單層膜 73 4-4-2 (BT/BS)n多層膜 73 4-5 熱處理對層間成份的影響 78 4-6 層數對電性的影響 78 4-6-1 介電性質 78 4-6-1-1 BaTiO3單層膜 78 4-6-1-2 (BT/BS)n多層膜 82 4-6-2 C-T特性 85 4-6-3 漏電流-電壓 85 4-6-4 P-E特性 86 第五章 結論 93 參考文獻 95

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