石墨烯擁有許多優異的特性與條件，良好的光電特性、熱特性以及機械性質，在近年來成為相當熱門的研究材料。
在實驗中，主要以CVD熱化學氣相沉積法成長石墨烯，不只是成長高品質的連續面單層石墨烯薄膜，也在較低的壓力下成長出雪花形狀的石墨烯，經由改變製程參數可成長出單一晶粒大於500um大小的石墨烯，或成長出擁有許多奈米等級縫隙的石墨烯薄膜，並可將此雪花狀石墨烯的縫隙接合成一連續面單層石墨烯薄膜。
在後續分析中，根據SEM、EBSD、AFM影像，觀察了在不同晶格方向的銅表面所成長出的雪花狀石墨烯，發現石墨烯的形狀、成核、覆蓋程度、分支成長方向以及在覆蓋有石墨烯的銅表面上的階梯狀排列，都跟銅表面的晶格方向有所關係，此表示在石墨烯的成長上，不只是製程參數，如壓力、氣體流量、溫度等，會對其結果造成影響，銅的晶格方向也是影響石墨烯成長的重要原因之一。
此外，在實驗中也嘗試使用含碳氫聚合物的幫浦油氣成長石墨烯，並從實驗中觀察幫浦油氣對成長石墨烯的影響，以及在相同處理步驟下不同編號的銅箔成長石墨烯結果。

Graphene has many excellent features, such as good optical, thermal and mechanical properties, and it becomes a popular material in recent years.
In the experiment, we grow graphene by chemical vapor deposition process. We not only grow high quality single layer graphene, but also grow snow-flake graphene at lower pressure. By changing the parameters, we can grow large grain size graphene which was over 500um, and grow snow-flake graphene with nano-gaps. And the gaps of snow-flake graphene can be merged to grow continuous film.
After using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and atomic force microscope (AFM) to analysis graphene and copper, we observed snow-flake graphene growing on different copper crystals, and we found that the graphene shape, nucleation, coverage on copper, branch growth direction and the step on copper surface are related to the crystal orientation of copper surface. It means that CVD graphene growing on copper not only affect by the parameters such as pressure, gas flow rate, and temperature, but also crystal orientation of copper surface.
In addition, the experiment also used pump oil containing hydrocarbon polymer to grow graphene, and we also observed the effect of pump oil on graphene growth.

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