本研究為以氧電漿製作高介電常數氧化鋁介電層，並以不同高分子溶液以旋轉塗佈製程製作介電修飾層，將其應用在互補式反相器並探討其對元件電特性之影響。
在氧化鋁薄膜特性方面，利用掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)及化學分析電子光譜儀(ESCA)對其厚度、表面形貌、元素組成進行分析，最後應用在以PTCDI-C13H27為主動層之電晶體元件並驗證其對電性的影響。互補式反相器部分則由前述所得之最佳製程參數製作成互補式反相器並探討其在不同介電修飾層及不同濃度介電修飾層上對元件特性之影響。
首先，在掃描式電子顯微鏡及原子力顯微鏡分析部分，可知氧電漿在對鋁金屬表面進行氧化的同時也會產生些微蝕刻的效應，且所得之氧化鋁表面粗糙度約為5 nm，而在化學分析電子光譜儀分析部分，可知在氧電漿製程中通以6 sccm之氧氣通量時，表面氧原子與鋁原子的數目比最為接近氧化鋁的原子比例，在單型電晶體的電性表現上也會得到最大的輸出電流值。
再者，在不同修飾層對於互補式反相器的比較上，以C-PVP作為元件介電修飾層不論在訊號增益大小及切換電壓的位置上，都較以固含量3.6 %的PI-1溶液所製成的互補式反相器元件佳。最後，稀釋PI-1固含量可以在固含量為1.8 %的PI-1溶液所製成之互補式反相器上得到最接近理想的切換電壓值(誤差率1 %)、大於40的訊號增益及相對匹配的雜訊容限，在連續操作穩定性的分析部分，以3.6 %固含量PI-1所製成之互補式反相器在輸出電壓值的變化上則較其他濃度穩定。綜合以上，本論文成功以簡易製程實現低電壓操作互補式反相器並具有接近理想的切換電壓、高的電壓增益、匹配的雜訊容限及穩定的連續操作。

Organic thin film transistors (OTFTs) could be a promising candidate for the application in the future portable electronic products featuring low-voltage operation and eco-friendly. In this study, we demonstrated OTFTs with a polymer-modified high-k AlOx thin film as the dielectric through facile process. The AlO¬x thin film was prepared by oxygen plasma treatment, and with oxygen flux of 6 sccm during oxygen plasma treatment generates the best quality of AlOx thin film for OTFT applications. Furthermore, OTFTs modified by polyimide (PI) solution with different solid content in 1-Methyl-2-pyrrolidone (NMP) are investigated. The n-type and p-type OTFTs modified by PI solution of 1.8 % solid content lead to perfectly matched threshold voltages, comparable drain currents and high on/off ratios at the operation voltage of 3 V. Consequently, the complementary inverter assembled with those OTFTs obtains an ideal switching voltage, high noise margins, and a high signal gain by 40.

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