本篇論文內容為利用射頻磁控濺鍍法沉積氧化銦鎵薄膜，並將其應用於薄膜電晶體之主動層、光感測器以及酸鹼感測器，並探討其元件特性。
首先我們在不同氧氣分壓的製程條件下，沉積我們的氧化銦鎵薄膜，並分別探討其薄膜的結構特性、光學特性及表面/縱深分析特性 在結構特性上，表面的結構緻密，且隨著氧分壓的上升，逐漸呈現出和氧化銦一致的晶相；晶相強度顯著增加，也代表其結晶性逐漸變好。藉由XPS的分析也可以發現，薄膜之中的氧空缺由於製程中氧氣通入增加而逐漸減少。在光學特性上，由於鎵的能隙極大，有鎵成份存在於薄膜，使得氧化銦鎵薄膜成為一種寬能隙的材料，主要吸收紫外光波段，並且其對於可見光波段的光都有80% 以上穿透率。表面分析的部份則藉由AFM做量測，可看出由射頻磁控濺鍍法沉積的氧化銦鎵薄膜，表面粗糙度很小，對於薄膜應用於元件的電特性是有利的。
在實驗的第二部分，我們將氧化銦鎵薄膜應用於光感測器，改變氧流量而比較其對於元件特性的影響。可以見到隨著氧流量的增加，有效抑制暗電流，並讓金半接觸面由歐姆接面轉變為蕭基接面，開關反應時間大幅降低。其中，在氧分壓20%下製作的元件，暗電流降低至8.1 × 10−12安培，響應可達0.31安培/瓦，開/關時間降低至21/27秒。另外我們也改變銦和鎵的比例應用於光感測器作探討，起初，元件的響應大只有10-5 安培/瓦，但在經過退火處理後，薄膜中原子重新排列，最後改善光感測器的響應至10-2 安培/瓦。
在實驗的第三部分，我們使用二氧化矽做為氧化銦鎵薄膜電晶體的閘極介電層，使用氧化銦:氧化鎵原子比例為9:1的氧化銦鎵靶材，並且藉由調變濺鍍製程中的氧流量以找出對於薄膜電晶體之最佳參數。在室溫下得到場效電子遷移率為434.9 cm2/V∙s，臨界電壓為3.24 V，次臨界擺幅為0.31，開關電流比為5個數量級。此外我們也比較不同氧化銦鎵比例所製作之薄膜電晶體差異，可以得知氧化銦比例過多時，主動層偏向導體，會導致漏電流過大，而使薄膜電晶體無法關閉；另一方面，當氧化鎵含量過多時，則會偏向絕緣體，雖然仍有不錯的開關電流比，但是在子遷移率會非常小；因此氧化銦對於氧化鎵之比例，在製作薄膜電晶體上，是極其重要的一項關鍵。
在實驗最後一個部份，我們選用低阻值的氧化銦鎵薄膜應用於延伸式閘極酸鹼感測器，量測後可發現銦鎵比例9:1的薄膜，其靈敏度在VD=3的時候可達56.24 uA/pH，在Id=200時可達43.7uA/pH; 皆優於以往所發表過之延伸式閘極酸鹼感測器。

In this thesis, the indium gallium oxide (InGaO) is deposited by RF magnetron sputtering and the films are applied to photodetectors, thin film transistors and EGFET pH sensors. The properties of the devices are discussed in detail
First, InGaO films are deposited under different oxygen partial pressure and researched into structural, optical, and surface/depth element analysis. For the structural analysis, the surface of films is dense. With the increasing of oxygen partial pressure, the crystalline phase gradually appears and is consistent with In2O3. The peak intensities increased, indicating that the crystalline qualities are improved. It can also be observed from XPS analysis that the oxygen vacancies decrease as the partial oxygen pressure increases. For the optical analysis, owing to the large bandgap of gallium, InGaO thin films could be used as wide bandgap material, absorbing ultraviolet light. Furthermore, the transmittance in the visible region is more than 80%. For surface/depth element analysis, AFM measurement is used to observe the surface. The smooth surface of the films leads to lower surface density of states, which is beneficial for the performance of the devices.
Next, InGaO photodetectors are fabricated under various oxygen flow ratios to investigate influence on these devices. The dark current could be suppressed effectively with the increasing oxygen flow. Also, the Ohmic contact is tuned to Schottky contact and the photoresponse time decreases. For the photodetectors fabricated under 20% oxygen partial pressure, dark current can be reduced to 8.1 × 10-12 amps, the response rises to 0.31 amperes / watt, and the photoresponse time is reduced to 21/27 seconds. On the other hand, we also make a research on the different indium to gallium ratio. At first, the responsivity is 10-5 amperes/watt, however, the atoms in the film rearrange after the annealing process and the responsivity rises to about 10-2 amperes/watt.
In the third part of the experiment, we fabricated InGaO TFT with silicon oxide gate dielectric layer. The optimized parameters of In0.9Ga0.1O TFT is fabricated under pO2= 20%. The field effect mobility is 434.9 cm2/V∙S, Ion/Ioff ratio is 5 order and SS is 0.31V/decade. In addition, we compare the difference of TFTs produced by various indium to gallium ratio targets. When the proportion of indium is too much, the active layer becomes a conductor, leading to large leakage current and the TFR cannot be turned off. On the other hand, when the proportion of gallium is too much, the device becomes dielectric. In this way, the device performs satisfactory Ion/Ioff ratio, but the mobility drops at the same time. Therefore, the ratio of indium to gallium is a very critical point on fabricating TFTs.
In the last part of the experiment, we apply In0.9Ga0.1O in the extended gate field effect transistors because of its low-resistance. The sensitivity is up to 56.24 uA / pH as VD = 3, 43.7uA / pH as ID = 200. These values are superior to the EGFET published previously.

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Chapter7
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