| 研究生: |
幸盟凱 Hsing, Meng-Kai |
|---|---|
| 論文名稱: |
磊晶Py/Ru/Py三層膜之磁阻與磁性之研究 Studies of magnetism and mgnetoresistance in Py/Ru/Py trilayers |
| 指導教授: |
黃榮俊
Huang, J.C.A |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 物理學系 Department of Physics |
| 論文出版年: | 2002 |
| 畢業學年度: | 90 |
| 語文別: | 中文 |
| 論文頁數: | 103 |
| 中文關鍵詞: | 耦合振盪 、反鐵磁耦合 、巨磁阻 |
| 外文關鍵詞: | NiFe/Ru, GMR, magnetoresistance |
| 相關次數: | 點閱:131 下載:1 |
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本實驗是利用MBE系統成長高品質的 NiFe80Fe20 / Ru / NiFe80Fe20 三層膜,以選取適當的基板(Al2O3(11-20))與不同間隔層(Ru)厚度,藉此討論此三層膜系統之磁阻效應與隨著Ru厚度變化出現反鐵磁耦合振盪的情形。
近來已經有許多關於鐵磁性材料透過非磁性物質產生交換耦合與其巨磁阻(giant magnetoresistance)效應的研究,例如:Fe/Cr、Co/Cr、Co/Ru這些系統已經被廣泛的探討,在本實驗中我們利用此系統—NiFe80Fe20 / Ru / NiFe80Fe20 三層膜,並成功地找到反鐵磁耦合振盪現象。實驗中藉由反射式高能電子繞射儀(RHEED)探討其磊晶結構;縱向磁光科爾效應儀(LMOKE)、震動樣品分析儀(VSM)來量測其磁性行為;原子力顯微鏡(AFM)來觀察其原子表面型態;再利用磁阻量測儀(MR)看其磁阻變化率。以研究提升磁阻率(DR/Ro)為目的。
By molecular beam epitaxy (MBE), the author has prepared high-quality NiFe80Fe20 / Ru / NiFe80Fe20 trilayers with different spacer (Ru) thickness on Al2O3(11-20) substrates. This thesis study on the magnetoresistance effect and the oscillation behavior of antiferromagnetic coupling as a function of the Ru thickness in Ni80Fe20/Ru/Ni80Fe20 trilayers.
The oscillation of the interlayer coupling as a function of the spacer thickness and the giant magnetoresistance effect have been extensively studied in recent years. In particular, Fe/Cr, Co/Cr, Co/Cu systems have been studied by different authors. In this work, we use the trilayers system—NiFe80Fe20 / Ru / NiFe80Fe20 success to find the oscillation behavior of antiferromagnetic coupling. In our experiment, Reflection high-energy electron diffraction (RHEED) has been employed to study the epitaxial relation and surface of the trilayers structure. Longitudinal magneto-optical Kerr effect (LMOKE) and vibration sample Magnetometer (VSM) have been used to investigate the magneto-optical properties. Atomic Force Microscopy (AFM) has been used to observe the atom and roughness on the trilayers surface. We also use the Magneto-Resistance (MR) to observe the ratio of resistance with field.
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