本實驗使用氯化亞銅、氯化銦和過量的硫為反應物、十八油胺為界面活性劑、己烷為溶劑，藉由簡易且安全性高之溶熱法成功製備出粒徑在 4.9 奈米 ~ 5.8 奈米之間，而且粒徑均勻度高的三成份 CuInS2 奈米粒子。藉由 X 光繞射分析和選區電子繞射，確定合成所得的奈米粒子結晶結構為黃銅礦結晶結構; 使用穿透式電子顯微鏡觀，可以觀察到奈米粒子的形狀和粒徑均勻度; 而藉紫外光/可見光吸收光譜和螢光光譜，也可以觀察到奈米粒子由於粒徑小於其本身之激子波爾尺寸時，在光學上發生的量子侷限效應。在實驗中，我們也探討金屬離子濃度和反應時間對奈米粒子形態的影響，發現當金屬離子濃度太低或反應時間太久，都會發生使奈米粒子不均勻化的 Ostwald Ripening 現象。

Narrow size-distribution ternary CuInS2 nanoparticles with size from 4.9 nm to 5.8 nm synthesized from copper chlorides, indium chlorides, excess sulfur, oleylamine as surfactants and hexane as solvent were successfully prepared through simple and safe solvothermal route. The CuInS2 nanoparticles were chalcopyrite structure characterized by XRD pattern and SAED, the morphology and the size of nanoparticles were characterized by TEM. Because the size of the nanoparticles was smaller than its excitonic Bohr size, quantum confinement effect of nanoparticles on optical properties happened and was observed by UV/vis absorption and photoluminescence. In this experiment, we also discussed the effects of cationic concentration and reaction time on the morphology of nanoparticles. Ostwald Ripening which led nanoparicles defocused was occurred as cationic concentration was lower or reaction time was longer.

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