本論文主要是利用電沉積技術製備硒化銅銦薄膜與一維硒化銅銦奈米線結構。使用電沉積技術製備硒化銅銦前驅膜容易導致前驅膜之表面過於粗糙或是大量二次相存在於薄膜中。若前驅膜表面過於粗糙，會使得後續緩衝層硫化鎘(CdS)不易披覆於硒化銅銦薄膜上，導致漏電流增加，影響元件轉換效率。由於二次相是屬高導電材料，因此在電沉積過程中，若產生大量之二次相存在於薄膜內部或表面，會形成並聯路徑，降低元件之效率。因此，為了降低前驅膜表面粗糙度與降低電鍍過程中二次相之形成，本論文藉由調整電鍍液中的銅濃度與添加劑的使用分別降低前驅膜之粗糙度與抑制二次相於電鍍過程之生成。然而，由於使用電鍍技術製備硒化銅銦薄膜有較差之結晶品質，故需藉由熱回火製程提升前驅膜之結晶品質。前驅薄膜被熱回火處理於硒氣氛環境下450°C後製作成太陽能電池，其元件結構為Al/AZO/i-ZnO/CdS/CuInSe2/Mo，可得元件之轉換效率達2.51%。另外，本論文亦藉由電鍍技術搭配陽極氧化鋁模板之輔助製備接近化學劑量比之硒化銅銦奈米線陣列，並討論其添加劑對於硒化銅銦奈米線成長機制的影響。
該論文主要可分成四個部分，分別為：(1)研究電鍍液之銅離子濃度對於硒化銅銦前驅膜之微結構與成核機制的影響。(2) 研究添加劑-十二烷基硫酸鈉(Sodium dodecyl sulfate，SDS)對於硒化銅銦前驅膜之表面形貌與成核機制之影響。(3)研究十二烷基硫酸鈉對於金屬離子的電化學行為與抑制二次相之生成。(4)研究添加劑-二甲基亞碸(DMSO)對於硒化銅銦奈米線之成長機制。

In this dissertation, CuInSe2 thin film and one-dimensional (1D) CuInSe2 nanowire arrays were fabricated by using electrodepostion technology. Using electrodeposition to fabricate CuInSe2 thin films involves some critical problems in the surface morphology, and the secondary phase contents of the precursor films. In general, the surface morphology of electrodeposited films is roughness. Such film morphology is an obstacle a flawless junction of the CuInSe2 film with the buffer layer (CdS). Therefore, shunting effects may occur between the CuInSe2/CdS interface, leading to decreased efficiency of the photovoltaic cells. Using the electrodeposition technique to fabricate CuInSe2 films generally causes undesirable secondary phases to occur, such as CuxSey. These phases are difficult to control during the electrodeposition process and are high-conductivity phases. Excess secondary phases that occur in CuInSe2 films can produce shunt paths and reduce the efficiency of devices. Therefore, the aim of this dissertation is to reduce the surface roughness of precursor films and formation of secondary phases during the electrodeposition process by adjusting the experiment parameters such as Cu concentration in the electrolyte and usage of additive (Sodium dodecyl sulfate (SDS)). The adjustment of these parameters can improve efficiently the surface morphology of precursor films and suppress the formation of secondary phases. However, it is well known that the electrodeposited precursor films have the poor crystalline quality and this problem can affect significantly the performance of devices. Therefore, these precursor films have to undergo the post-treatment such as annealing process, which can improve significantly the crystallinity of precursor films. Finally, the CuInSe2 solar cells comprising an Al/AZO/i-ZnO/CdS/CuInSe2/Mo/Glass structure were fabricated and exhibited a conversion efficiency of 2.51%.
In addition, we successfully fabricated near stoichiometric CuInSe2 nanowire arrays in a novel acidic Dimethyl sulfoxide (DMSO)-aqueous electrolyte using electrodeposition technique with the assistance of an anodized aluminum oxide (AAO) template and investigated the effects of DMSO additive on the composition and crystallization of CuInSe2 nanowires.
This dissertation can be divided into four segments and described as follow:

i. Investigate the microstructure and the nucleation mechanism of CuInSe2 precursor films by adjusting the Cu concentration in the electrolyte.
ii. Investigate the effect of SDS on the surface morphology and nucleation mechanism of CuInSe2 precursor films.
iii. Investigate the electrochemistry behavior of metal ions and suppress the formation of secondary phases with SDS additive.
iv. Investigate the growth mechanism of CuInSe2 nanowires in the AAO templates by using the DMSO additive.

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