本論文利用共電鍍方式取代傳統的物理氣相沉積法(濺鍍)來製備Cu-In先驅層於可撓式的不鏽鋼基板上，再經由蒸鍍硒化的方式，形成CIS主吸收層，具有低成本、製程簡單、製造大面積材料的潛力，且可撓式基板的應用對於產業界之量產及發展上皆有相當大的助益。
在探討電鍍薄膜實驗中，電鍍液pH值、Cu-In相對濃度、錯合劑、硒化溫度與時間等等的實驗參數皆會影響最終CIS主吸收層的薄膜品質，並透過X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、能量分散光譜儀(EDS)，對製備的CIS主吸收層進行晶體結構、表面形貌、薄膜厚度、組成成分進行分析。
最後成功作出具有轉換效率的薄膜太陽能電池，由電流-電壓特性曲線，該元件具有顯著之二極體特性，量測數據Vm = 0.05 V、Im = 0.48 mA、F.F. = 25 %、η = 0.26 %。
關鍵字: 共電鍍、二硒化銅銦

In this thesis, the novel co-electrodeposition method was used to deposit Copper-Indium as metal precursors on the flexible stainless substrate. Sequentially, the evaporation method was used to achieve the selenization process and form the CIS films as an absorbent layer for thin film solar cell devices. As compared with the traditional physical vapor deposition, the co-deposition methods provide the benefits of low cost, simple process, and large-area process. Moreover, the flexible stainless substrates provide advantages on commercial applications and productions in solar cell industry.
In this work, the various experimental parameters have to be optimized including the pH value, concentrations, temperature of selenization and durations time. We then used the analytical tools such as SEM, XRD, and EDS to identify the thin films CIS. The surface morphology, the preferred crystalline orientation, the stoichiometry, of CIS absorber layers are characterized.
Finally, we successfully fabricate the thin film solar cells with transforming efficiency (by using co-electrodeposition of Cu-In precursors). From the measurements by the solar simulator, the devices apparently exhibit the diode I-V characteristics. The results of maximum voltage (Vm), maximum current(Im), fill factor(F.F.) and efficiency(η) of the cells are 0.05 V, 0.48 mA, 25 % and 0.26 %, respectively.
Keywords: co-electrodeposition, CIS.

[1] 電子工程專輯網, 拓墣產業研究所, 台灣, 2007.
[2] 黃秉鈞, 科學人雜誌, 第72期, 台灣, 2008.
[3] 劉炘, 太陽能簡介, 台灣, 2006.
[4] 楊德仁, 太陽能電池材料, 五南圖書出版公司, 台灣, P.7, 2008.
[5] 戴寶通, 鄭晃忠, 太陽能電池技術手冊, P.10-11, 2008.
[6] 鄭淑娟, 薄膜太陽能電池技術、製程與產品特性分析, 台灣,2009.
[7] Display Technology Knowledge Platform, 薄膜太陽能電池-太陽能電池, 台灣, 2007.
[8] 莊嘉琛, 太陽能工程-太陽電池篇, 全華科技圖書, 台灣,2003.
[9] MIC, 資策會, 台灣, 2009.
[10] 楊德仁, 太陽能電池材料, 五南圖書出版公司, 台灣,P.65-66, 2008
[11] 林明獻, 太陽能電池技術入門, 全華圖書股份有限公司, 台灣,2007.
[12] 楊德仁, 太陽能電池材料, 五南圖書出版公司, 台灣, P.5-6,2008.
[13] 陳頤承, 郭昭顯, 陳俊亨, 太陽電池量測技術, 工業材料雜誌258期, 台灣, 2006.
[14] J.L. Shsy, J.H. Wernick, Ternary Chalcopyrite Semiconductors:Growth,Electronic Properties, and Application, Pergamon Press, Oxford, P.118, 1975.
[15] L. Thouin, J. Vedel, Electrodeposition and Characterization of CulnSe2 Thin Films Journal of The Electrochemical Society, France, Vol.142, P.2996-3001, 1995.
[16] R.W. Birkmire, E. Eser, Polycrystalline thin film solar cells: Present Status and Future Potential, Annual Review of Materials Science, USA, Vol.27,P.627, 1997.
[17] ASTM standard E948: Test method for electrical performance of photovoltaic cells using reference cells under simulated sunlight. In ASTM Annual Book of Standards, ASTM International, West Conshohocken, PA, USA, Vol.12.02, 2002.
[18] R.N. Bhattacharya, J. Keane, Electrodeposition of In-Se, Cu-Se, and Cu-In-Se thin films, Journal of The Electrochemical Society, USA, Vol.143, P.854, 1996.
[19] R.N. Bhattacharya, P.J. Sebastian, X. Mathew, Preparation and characterization of copper indium diselenide films by electroless deposition, Solar Energy Materials and Solar Cells, USA, Vol.66, P.316,2000.
[20] P.J. Sebastian, E. Calixto, A. Fernandez, Journal of Crystal Growth, Mexico, Vol.169, P.287, 1996.
[21] R. Friedfeld, R.P. Raffaelle, J.G. Mantovani, Electrodeposition of CuInxGa1-xSe2 thin films, Solar Energy Materials and Solar Cells, USA, Vol. 58, P.375-385, 1999.
[22] J. Herrero, Recrystallization and components redistribution processes in electrodeposited CuInSe2 thin films, Thin Solid Films, Spain, Vol.387, P.57,2001.
[23] P. K. Vidyadharan, K.P. Vijayakumar, Characterization of CuInSe2/CdS thin-film solar cells prepared using CBD, Solar Energy Materials and Solar Cells, India,Vol.51, P.48, 1998.
[24] D. Braunger, D. Hariskos, G. Bilger, U. Rau, H.W. Schock, Influence of sodium on the growth of polycrystalline Cu(In,Ga)Se2 thin films. Thin Solid Films, Germany, Vol.361-362, P.161-166, 2000.
[25] M. Ruckh, D. Schmid, M. Kaiser, R. Schäffler, T. Walter, H.W. Schock, Influence of Substrates on the Electrical Properties of Cu(In,Ga)Se2 Thin Films, 1st World Conference on Photovoltaic Energy Conversion, Vol.41-42, Germany, P.156-159, 1994.
[26] T.J. Vink, M.A.J. Somers, J.L.C. Daams, A.G. Dirks, Stress, strain, and microstructure of sputter- deposited Mo thin films, Journal of Applied Physics, Netherlands, Vol.70, P.4301-4308, 1991.
[27] 林明獻, 太陽電池技術入門, 全華圖書, 台灣, P.11-9, 2008.
[28] 戴寶通, 鄭晃忠, 太陽能電池技術手冊, 台灣, P.347-348, 2008.
[29] 林明獻, 太陽電池技術入門, 全華圖書, 台灣, P.11-11, 2008.
[30] 何生龍, 彩色電鍍技術, 化學工業出版社, 台灣, 2008.
[31] F.S Hasoon, Y. Yan, H . Althani, K.M Jones, H.R Moutinho, Alleman J, M.M. Al-Jassim, R. Noufi, Microstructural properties of Cu(In,Ga)Se2 thin films used in high-efficiency devices, Thin Solid Films, USA, Vol.387, P.1-5, 2001.
[32] Q. Liu, G. Mao, J. Ao, Chemical Bath Deposited ZnS Thin Films: Preparation and Characterization, Applied Surface Science, China, Vol.254, P.5711-5714, 2008.
[33] 陳力俊, 材料電子顯微鏡學, 儀科中心出版, 台灣, P.352-389, 1994.
[34] Naglaa Fathy, R.K., Masaya Ichimura, Preparation of ZnS thin films by the pulsed electrochemical deposition, Materials Science and Engineering, Vol.107, P.271-276, 2004.
[35] M.E. Calixto, R.N. Bhattacharya, P.J. Sebastian, A.M. Fernandez, S.A. Gamboa, R.N. Noufi, Cu(In,Ga)Se2 based photovoltaic structure by electrodeposition and processing, Solar Energy Materials and Solar Cells,Vol.55, P.23-29, 1998.
[36] J.S.Chen, Preparation and Optical Properties of ZnS:Mn Nanocrystals Sensitized With Carboxylic Acid, The Chemical Engineering Research Institute of Feng Chia University, P.20, 2003.
[37] 許樹恩, 吳泰伯, X 光繞射原理與材料結構分析, 中國材料學會, 新竹, P.169, 1996.
[38] C. J. Huang, T. H. Meen, M. Y. Lai, W.R. Chen, Formation of CuInSe2 thin films on flexible substrates by electrodeposition technique, Solar energy materials & solar cells, Vol.82, P.553-565, 2004.
[39] Fangdan Jiang, Jiayou Feng, Effect of temperature on selenization process of metallic Cu–In alloy precursors, Thin Solid Films, Vol.515,P.1950-1955, 2006.
[40] Miguel A. Contreras, Brian Egaas, K. Ramanathan, J. Hiltner, A. Swartzlander, F. Hasoon1 and Rommel Noufi, Progress Toward 20% Efficiency in Cu(In,Ga)Se2 Polycrystalline Thin-film Solar Cells, Progress in Photovoltaics: Research and Applications, Vol.7, P.311-316, 1999.