本研究探討導電高分子聚(三-烷基噻吩)(P3AT)在和六甲基苯(HMB)混摻後，導電高分子在HMB晶相基材上的磊晶成長行為。藉由瞭解側鏈長度、混摻比例、分子量以及石墨烯(Graphene)等因素對P3AT晶相析出的影響，來推論所牽涉的晶相成長機制。
以熱分析實驗探討混摻比例對熔點的影響，可觀察到隨著P3AT的側鏈的增長，二元相圖的共晶點隨之往P3AT一側移動。選擇的P3AT分子若有分子量較大與側鏈較長等不利結晶的因素，則在HMB晶相上有序相的成長會傾向形成Face-on的排列取向。若P3AT分子具有較短的側鏈與低分子量等有利結晶的因素，則傾向發展出沿著分子鏈方向延伸的長板狀區域，具有Edge-on的排列取向。對於這些晶相的成長結果，不論是排列取向或析出區域的形態，都可以束狀微胞模型(Fringed micelle model)來進行解釋。
降低P3AT在HMB中的比例後，可以發現P3ATs的Face-on排列取向具有臨界微胞濃度(critical micelle concentration, CMC)的特性，僅在濃度達一定值後方能產生。由於束狀微胞模型中亦有CMC的概念，因此此實驗結果進一步證實了我們的推論。
若將石墨烯混摻入P3AT與HMB二元系，可以發現到P3ATs均無法形成Face-on的排列取向。因此這個研究上成功的藉由不同的因素來調控P3HT有序相的排列取向。

Poly(3-alkylthiophenes) (P3ATs) have been widely investigated due to their excellent environmental stability, good processability, and promising electro-optical properties arising from an enhanced crystalline microstructure. However, the electrical conductivity of P3AT can be severely manipulated by molecular organization. Therefore it is needed to explore an effective way to adjust the orientation of P3AT organization for the use within selected devices.
In previous research, we successfully adjust the orientation of P3AT epitaxial organization via varying the degree of undercooling of eutectic systems of poly(3-alkylthiophenes) (P3ATs) and hexamethylbenzene (HMB). Based on this result, prior formation of fringed micelle is derived. In this research we further explored various influential factors on the epitaxial organization of P3AT in order to decipher the proposed role of fringed micelle.
The exploration of concentration effect has illustrated that as the concentration of studied P3AT is below a certain limit, only Edge-on organization of P3AT can be formed, indicating the impact of critical micelle concentration (CMC). Taking this fact into consideration, we further identified the effect of crystallization tendency and crystal growth rate. It was recognized that Face-on organization is preferred when crystallization tendency is low or crystal growth rate is slow, in these cases the growth of stable crystalline form is less efficient. In contrast, while crystalline form of P3AT is able to develop efficiently within binary mixture, the growth of Edge-on organization is dominative. Hence this research has illustrated a possible mechanism of manipulating the epitaxial organization of P3AT toward the need of device performance.

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