近年來CMOS 製程快速進步，已進入所謂的深次微米（Deep
Sub-micron）的紀元，優異的性能使元件速度進入GHz 領域，因而促使CMOS 製程被大幅應用於更高頻的IC 電路系統，其ft 足以與其他製程如Ⅲ-Ⅴ技術等一較長短。再加上CMOS Technology 為目前半導體廠之主流，適合大量生產，因此利用CMOS Technology 來製作射頻電路也漸成為市場之主流。為了配合CMOS 製程，現用於射頻IC 電路的元件如電晶體、電感、電容等其結構及製造方法皆須重新設計, 以簡化設計的難度, 提高製程的良率。
　　本論文利用HFSS 軟體研究金氧半技術相容製程所製且能量交連損失小的不同結構空氣柱(air gap) 平面螺旋電感器，研究結果發現空氣柱(air gap)之結構可經由調整空氣所佔的比率來製作強度不同的電感,更可提高其Q 值。此外經由HFSS 分析發現，立體線圈結構電感(Solenoid inductor) 及堆疊式螺旋結構（stacked spiral）更能在同樣的面積下比平面電感結構有較高的電感值,因此空氣柱結構的技術應用在立體線圈電感及堆疊式螺旋結構上,可使所得到的電感兼具小面積與高電感值之優點，更適合在射頻電路上使用。

　　Silicon is recognized as a fascinating material to meet the demand of high integration, low cost, and mature technique in integrated circuits for wireless communication applications. Additionally , the on-chip RF inductors without externally bonding wires have played an important role in SOC (System On Chip) designs. However, for the RF device in silicon chip, the substrate coupling has become as a noticeable issue between analog and digital portions of a mixed signal IC chip. Therefore, the development of the high Q RF inductor based on the studies of the substrate coupling with HFSS becomes the major target of the study.
　　In this thesis, the quality factor(Q), inductance as a function of spacing, metal width, metal thickness, number of turns, depth of air gap for spiral inductor, air gap solenoid inductors and air gap stacked spiral inductors were studied with HFSS in detail. This thesis will create and measured the air-gap spiral inductor in the third chapter. The air-gap solenoid-type inductor with better magnetic-electric conversion will be studied in the fourth chapter. Finally, the air-gap stacked spiral inductor will be created and measured to create the inductor with big inductance and high Q in a more efficient cost.

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