本文成功地使用改良式的金屬接觸轉印微影製程，製作最小線寬500 nm 的高頻表面聲波元件，並量測元件的頻率響應，量測到的最高工作頻率約為1.91 GHz。
本文使用的接觸式金屬轉印，首先利用h-PDMS軟性模仁的材料特性，完整地將金屬圖案轉印至壓電基板上的光阻層；之後再將轉印到壓電基板的金屬圖案作為一金屬光罩，以黃光微影的標準製程技術定義具次微米等級特徵的表面聲波元件，金屬轉印技術可輕易達到次微米甚至奈米等級的特徵尺寸。以轉印之金屬層作為光罩使用，由於金屬是直接貼附於光阻層之上，可減少光學繞射現象，因此可以精準定義次微米與奈米等級的圖形。
另一方面，本文量測高頻表面聲波的頻率響應，得到中心頻率最高1.91 GHz的單埠表面聲波諧振器，並嘗試增加元件金屬電極厚度，以觀察在2 GHz的高頻下，金屬電極厚度與波長比值對元件頻率響應的影響，最後再使用模態耦合(Coupling of Mode,COM)理論進行理論分析與實驗驗證。

This thesis describes a new method to fabricate high frequency surface acoustic wave (SAW) devices. With the new method known as metal contact printing photolithography (MCPP), we can fabricate SAW devices with a 500 nm line-width, and the central frequency of the fabricated SAW devices can reach 1.91 GHz.
The MCPP method first transfers a patterned metal film from a h-PDMS soft mold to the surface of photo-resist (PR) layer deposited on a piezoelectric substrate. The transferred metal pattern is subsequently used as a photo-mask for UV exposure. Therefore, SAW devices with a metal pattern on a piezoelectric substrate can be fabricated following standard photolithography approaches.
In the mean time, a number of SAW devices with different metal film thicknesses have been prepared and their characteristics and performance have been experimentally measured. The influence of film-thickness to wavelength ratio on the electrical behaviors of the SAW devices operated around 2 GHz are then experimentally determined. Finally, theoretical analysis based on coupling of mold (COM) method is carried out and compared with experimental results.

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