奈米碳管(Carbon Nanotubes，CNTs)的Fowler-Nordheim(F-N)圖形在高電壓區域常顯示出類似飽和(saturation-like)的現象。此現象歸因於CNTs的電阻效應以及在基板與CNTs之間的界面效應。Jo et al.建立了一道考慮電阻效應的F-N修正方程式，而且他們的模型能藉由調整CNTs的本體(bulk)電阻來擬合實驗數據[52]。本研究使用古典載子傳輸模型來探討成長在矽基材上的一維奈米結構的電阻效應。古典傳輸方程式被用來描述在材料裡的載子傳輸，並且用波松方程式(Poisson equation)來解電位分佈。在發射端與真空界面的場發射用F-N方程式來模擬。本論文的模擬結果顯示出由模擬所得到的F-N圖形也能符合Jo的F-N修正方程式。更重要的是，由一維奈米結構之F-N圖形所得到的電阻值非常接近計算值，此計算值是由模擬中所使用的材料遷移率得到的。再者，界面效應也可視為一個與CNTs的本體電阻作串聯的大電阻器。此外，載子的溫度效應對一維奈米結構中的載子遷移率和電阻的影響亦可由此電阻效應得到解釋。

The Fowler-Nordheim (F-N) plots of the carbon nanotubes (CNTs) often exhibit a saturation-like phenomenon in the high-voltage region. This phenomenon is attributable to the resistance effect of the CNTs and/ or the interface effect between the substrate and CNTs. Jo et al. established a modified F-N equation to take the resistance effect into account. And their model can fit the experiment data well by adjusting the bulk resistance of the CNTs [52]. In this study, the carrier transport model is applied to investigate the resistance effect of the 1-D nanostructure grown on silicon substrate. The classical transport equation is used to describe the carrier transport in the material and solved together with the Poisson,s equation. The field emission at the emitter-vacuum interface is modeled by the F-N equation. My thesis simulation results exhibit that the F-N plots obtained from the simulation can also be fitted well by Jo,s modified F-N equation. And more importantly, the fitted resistance of the 1-D nanostructure is very close to the calculated resistance from the material mobility used in the simulation. Furthermore, the interface effect can also be considered as a large resistor which is in series with the bulk resistance of the 1-D nanostructure. The effect of carrier,s temperature on carrier,s mobility and resistance in the 1-D nanostructure is also examined.

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