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研究生： 劉世量
Liu, Shih-Liang
論文名稱： 提升氮化鋁／環氧樹脂複合材料熱傳導性質之研究
Study of Increasing Thermal Conductivity of the AlN／Epoxy Composites
指導教授： 鍾賢龍
Chung, Shyan-Lung
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2003
畢業學年度： 91
語文別： 中文
論文頁數： 93
中文關鍵詞： 氮化鋁 、熱傳導值 、環氧樹脂封裝材料
外文關鍵詞： Aluminum Nitride, Epoxy Molding Compound, thermal conductivity
相關次數： 點閱：115  下載：3 
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    • 半導體封裝材料的製造有一些重要的性質是必須注意的：高熱傳導係數、低介電常數、與矽晶片接近的熱膨脹係數等。所以具有優異性質的氮化鋁在本研究中被選用作為環氧樹脂的填充劑來增進Epoxy Molding Compound（EMC）試片的性質。本論文研究，使用實驗室自行研發合成氮化鋁粉體作為Epoxy Molding Compound（EMC）封裝用複合材料的填充劑。希望藉由氮化鋁優秀的性質，更有效地增進封裝材料的熱傳導性質，以因應未來的需求。我們使用不同於現今工業界所使用的低壓轉移成型法之熱壓成型法製作EMC封裝試片，測其熱傳導性質。實驗中使用液態促進劑而改變混煉EMC粉體製程，成功提升熱傳導性質。另外比較偶合劑、試片後硬化、氮化鋁粒徑大小、氮化鋁氧含量、氮化鋁經表面處理過對試片熱傳導值的影響。氮化鋁填充量為75wt%、粒徑14.33μm、氧含量0.4065wt%經表面處理披覆一層TiO2陶瓷材料後，所混煉出的EMC試片在經後硬化處理其熱傳導值可達7.01W/m-K。另外亦與市售粉體作一比較，顯示本實驗室所合成氮化鋁已達商業化標準。

    Some important properties for manufacturing semiconductor packaging are: high values of thermal conductivity, low values of dielectric constants, relatively low values of thermal expansion coefficient and low water uptake. Thus, in this study, AlN (Aluminum Nitride) was selected as the filler for an epoxy matrix to achieve increased performance of an EMC (Epoxy Molding Compound). In this thesis, we used aluminum nitride powders synthesized by our lab as fillers of Epoxy Molding Compound . Because of the advanced properties of AlN, it could improve the thermal conductivities of the EMC materials to satisfy the demand for high frequency and smaller chips. The production process of EMC specimens in this research was different from the process of low pressure transfer molding. In this research, the catalyst was liquid so that the process of blend could be changed to improve the thermal conductivities. In addition, this research also compared the variables, such as coupling agent, post-cured, diameter of AlN, oxygen content of AlN and surface treatment of AlN etc., that affect the specimens. The thermal conductivity of the specimens could achieve higher than 7 W/m-K if filling 75 wt% AlN powders, which the diameter and oxygen content were 14.33 micron and 0.4065 wt% respectively and were coated a thin layer of TiO2, and EMC specimens were post-cured. Besides, comparing the AlN that synthesized by our lab with commercial ones, it showed that the AlN synthesized by our lab was conformed to the commercial requirement.

    摘要………………………………………………………I Abstract…………………………………………………II 總目錄 …………………………………………………III 表目錄 …………………………………………………VI 圖目錄 …………………………………………………VII 符號 ……………………………………………………IX 第一章 緒 論 ……………………………………………1 1-1引言……………………………………………………1 1-2半導體封裝材料………………………………………2 1-2-1封裝的目的…………………………………………2 1-2-2半導體封裝材料的配方……………………………3 1-2-3半導體封裝材的製作流程…………………………3 第二章 半導體封裝材料的要求…………………………9 2-1封裝材料的主劑--環氧樹脂…………………………9 2-1-1環氧樹脂的種類…………………………………10 2-2-1填充劑的比較……………………………………11 2-3封裝用偶合劑………………………………………12 2-4現今半導體封裝材料的要求………………………13 2-5研究動機……………………………………………18 第三章 實驗部分………………………………………24 3-1材料與藥品…………………………………………24 3-2分析儀器及設備……………………………………24 3-3試片製作……………………………………………26 3-3-1粉體的預處理……………………………………26 3-3-2EMC膠粉混煉 ……………………………………27 3-3-3試片製作…………………………………………27 3-4試片測試……………………………………………28 3-4-1熱傳導性…………………………………………28 3-4-2掃描式電子顯微鏡觀察…………………………28 3-4-3吸濕性……………………………………………29 3-4-4試片密度量測……………………………………29 3-4-5介電性質量測……………………………………30 3-4-6熱膨脹係數量測…………………………………30 3-4-7機械強度量測……………………………………30 3-5儀器分析……………………………………………31 3-5-1氮氧分析儀………………………………………31 3-5-2濕磨機……………………………………………31 3-5-3粒徑分析…………………………………………32 3-5-4X光繞射儀分析 …………………………………32 3-5-5表面吸附儀分析…………………………………33 3-5-6穿透式電子顯微鏡觀察…………………………33 第四章 提升熱傳導製程之研究與討論………………38 4-1不同硬化促進劑……………………………………38 4-2偶合劑的影響………………………………………39 4-2-1偶合劑的影響……………………………………39 4-2-2偶合劑的種類……………………………………40 4-2-3不同比例偶合劑…………………………………41 4-2-4熱固性塑膠披覆…………………………………43 4-3後硬化的影響………………………………………43 4-4填充劑粒徑的影響…………………………………44 4-5氧含量的影響………………………………………45 第五章 填充劑表面處理製程研究與討論及與市售 粉體之比較 ……………………………………………68 5-1填充劑經表面處理…………………………………68 5-2披覆無機物TiO2……………………………………69 5-3與市售填充劑之比較………………………………70 5-3-1試片物性之比較…………………………………71 5-3-2試片吸濕性之比較………………………………73 第六章 結論……………………………………………88 參考文獻 ………………………………………………89 自述 ……………………………………………………93

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