近年來太陽能電池之研究，許多是在尋找取代銅銦鎵硒的新材料，銅銦鎵硒有材料昂貴、製程具高危害性等缺點，因而銅鋅錫硫就成為取代銅銦鎵硒的好選擇。本研究使用非真空製程中的電鍍法來進行銅鋅錫硫薄膜的製備，此製程有設備簡單、無毒性等優點；並使用創新方法，改善傳統電鍍方式難以沉積鍍層的問題，得以成功使用分層電鍍法在鉬導電玻璃基板上沉積銅、鋅、錫前驅物，而所使用之電鍍液澄清、保鮮期長，實驗重現性良好，整體電鍍製程僅需數分鐘；隨後的硫化製程使用硫化氫氣體，在此環境下進行硫化熱處理，將銅鋅錫薄膜轉換為銅鋅錫硫相。
製備出的薄膜使用能量分散光譜儀(EDS)分析其元素組成、掃描式電子顯微鏡(SEM)來觀測其表面型態、X光繞射儀(XRD)及拉曼光譜儀(Raman Spectroscopy)分析其晶體結構。經過上述儀器分析驗證，本研究已成功製備出銅鋅錫硫薄膜，並可藉由電鍍參數的改變來調整最終薄膜之元素組成。

Nowadays, people try to find a substitute of Cu(In, Ga)Se2 (CIGS) on research of solar cells. Cu(In, Ga)Se2 (CIGS) has high cost and toxicity these two defects. Cu2ZnSnS4 (CZTS) thin films are one of the most promising materials for low-cost and low-toxicity thin-film solar cells since they consist of abundant materials. Therefore, Cu2ZnSnS4 (CZTS) has become a good candidate to substitute CIGS. This thesis used non-vacuum process to fabricate Cu2ZnSnS4 (CZTS) thin films. Innovative layer-by-layer electrodeposition method was done. The precursors (Cu/Zn/Sn stacked layers) were deposited by electrodeposited sequentially onto Mo-coated glass substrates. The electrodeposition bath was clear, durable. The process was repeatable and used just few minutes. The precursors were sulfurized by
annealing in H2S gas atmosphere. The Cu2ZnSnS4 (CZTS) thin films were analyzed and verified by energy dispersive spectroscopy (EDS), scanning electron microscope (SEM), X-ray diffraction (XRD), and Raman spectroscopy. The atom composition ratio could be controlled by adjusted electrodeposition parameter.

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