隨著工業的發展與民眾對於自身居住安全及環保意識抬頭，氣體感測器已經和我們的生活密不可分。氧化鎵材料在高溫下仍具有高穩定性，因此適合應用於高溫環境。
本實驗用電漿增強化學氣相沉積法(PECVD)製備碳膜及真空蒸鍍物理氣相沉積法(PVD)與水蒸氣熱氧化法製備氧化鎵薄膜氣體感測器。本實驗分兩階段：第一階段探討水蒸氣氧氛下氧化對氧化鎵薄膜表面型態及感測性質之影響。第二階段則探討碳/氧化鎵薄膜，不同厚度碳膜對氧化鎵薄膜表面型態及感測性質之影響。
實驗結果顯示，鎵薄膜在水蒸氣氣氛下氧化，會因不同載流氣體，而使氧化鎵薄膜表面型態有不同的表現，感測性質也會受到影響，當氧化時間增加，感測度會有下降的趨勢；碳/氧化鎵薄膜之最佳感測度甚至可高達120，與純氧化鎵薄膜之最佳感測度3.22要改善許多。

Gas sensors are becoming more and more important because of their extensive applications in the industrial, living security, and the human’s environmental protection. Gallium oxide semiconductor is adaptable to the high temperature application because it is stable under high temperature.
In the study, gallium oxide thin film was prepared by first depositing a carbon thin film onto a fused silica substrate by a plasma enhanced chemical vapor deposition (PECVD) , then a gallium film by rheotaxial growth, and finally thermal oxidation with water vapor. The effect of water vapor concentration during thermal oxidation process on the morphology and sensitivity of gallium oxide was examined. And then the variation of the morphology and sensitivity of C/Ga2O3 thin film with the carbon film was elucidated.
The experimental results show that water vapor concentration used to oxidize gallium thin film has significantly affected the morphology and sensitivity of the gallium oxide, and the sensitivity decreases with increasing the oxidizing time. A much better sensitivity was obtained for C/Ga2O3 thin film (120) than pure Ga2O3 thin film (3.22)

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