本論文主要研究利用調變基板溫度、蒸氣壓以及基板與蒸鍍源的距離…等等條件下，去改變CIS(220,204)與CIS(112)之比例，且大量降低硒粉的使用量更進一步降低製程成本。最後,當銅硒非結晶性的銅硒薄膜沉積在(110/300)為主的In2Se3薄膜上，並且進行高溫的硒化後，可有效增加CIS(220,204)晶向的形成，此種新製程方法可應用於業界。
論文一開始會先使用兩階段式共蒸鍍，接下來調整不同的基板溫度、K-cell溫度最後改變機板與蒸鍍源的距離來增加硒的蒸氣壓。同時吾人也研究了在不同蒸氣壓與不同基板溫度的銦硒與銅硒共蒸鍍製程，藉由XRD分析得知銦硒共蒸鍍在擁有較大的蒸氣壓情況下可得到(110/300)晶向為主的In2Se3薄膜，此晶向之薄膜有助於(220,204)晶向的CIS薄膜生長。此外銅硒共蒸鍍在較大蒸氣壓或較高基板溫度下可以得到Cu2-xSe的銅硒二元化合物，且在本實驗中也證實此種二元相在與(110/300)晶向為主的In2Se3薄膜反應所形成的CIS薄膜具有較高的CIS(220,204)/CIS(112)比例。
結合以上的實驗數據，我們使用了銅硒薄膜沉積在(110/300)為主的In2Se3薄膜上再進行高溫的硒化的特殊製程進一步提升了CIS(220,204)與CIS(112)的比例，且此種製程更具有可以應用在業界的潛能進而發展出(220,204)晶向為主的大面積二硒銅銦薄膜太陽能電池。

In this thesis, the main purpose is to investigate the (220,204)-textured formation by adjusting various conditions, thus apparently decreasing the content of selenium powder to obtain the cost down. Additionally, the amorphous Cu-Se thin film is deposited on the (110,300)-oriented In2Se3 precursor, can effectively enhance the formation of (220,204) -oriented CIS texture during the selenization at high temperature. Finally , this novel process can be employed for the solar industry.
The process adopts the traditional 2-step co-evaporation, and simultaneously adjusts several different parameters such as substrate temperature, k-cell’s temperature and selenium’s vapor pressure. Eventually, the distance of source to substrate is diminished for increasing the selenium’s vapor pressure. We simultaneously study the process of Cu-Se and In-Se co-evaporation at different vapor pressure and substrate temperature. The (110,300)-oriented In2Se3 thin films can be obtained under large vapor pressure of selenium and this orientation of In2Se3 is preferred to the formation of (220,204)-textured CIS thin films. Furthermore, the Cu2-xSe binary phase can be formed at larger vapor pressure or higher substrate temperature by 2-step co-evaporation. The results of XRD analysis also verify that the CIS film films does clearly achieve the higher ratio of (220,204)/(112) through the formation of Cu2-xSe and (110,300)-oriented In2Se3.
The particular process that I mentioned at first paragraph has demonstrated the selenization at high temperature to increase the ratio of (220,204)/(112) as well. This process has the potential of manufacturing application to develop the large-area CuInSe2 of (220,204)-preferred thin film solar cell.

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