本論文中描述於N型(111) 矽基板上使用不同緩衝層(多孔、單晶與多晶碳化矽)並利用金屬有機化學氣相沉積系統(MOCVD)成長氮化鎵薄膜的研究。其中單晶與多晶碳化矽緩衝層係以快速升溫化學氣相沉積系統(RTCVD)成長，多孔碳化矽則於單晶碳化矽薄膜上再利用電化學蝕刻法(electrochemical anodizaiton method)蝕刻出多孔狀結構。

吾人以光致螢光光譜儀(PL)、拉曼光譜儀(Raman)來分析薄膜間的殘餘二維應力(biaxial stress)，同時比較多孔碳化矽、單晶碳化矽、多晶碳化矽緩衝層上所成長的氮化鎵薄膜特性。結果發現多孔狀結構的殘餘應力值(-0.403GPa)幾乎為單晶β-SiC緩衝層(-1.186GPa)和多晶β-SiC緩衝層(-1.036GPa)的一半。又於場發射掃瞄式電子顯微鏡(FESEM)中也發現多孔狀結構與氮化鎵可形成最佳的接面，及最平整的氮化鎵薄膜，此外吾人並以此緩衝層於矽基板上製作出低漏電流及光增益為2427.23的MSM氮化鎵感光導體，驗證了本論文所提出之多孔狀結構的碳化矽緩衝層的確可幫助在矽基板上成長出高品質的氮化鎵薄膜。

In this thesis, we used MOCVD to grow GaN thin films on Si substrates with various buffer-layers, i.e. cubic β-SiC、poly β-SiC and PSC(porous β-SiC).Theβ-SiC thin films were prepared with RTCVD, while the PSC thin films were fabricated by electrochemical anodization method on cubicβ-SiC thin films.

The PL and Raman spectrometer were employed to analyze, and we also compared the residual biaxial stress of GaN thin films on different buffer-layers. Experimental results show the biaxial stress for the GaN thin film on PSC buffer-layer(-0.403GPa) is nearly one half of that on the cubic β-SiC buffer-layer(-1.186GPa) and poly β-SiC buffer-layer(-1.036GPa). Besides, from the FESEM cross section micro photo, we found the GaN on PSC has the smoothest and the best contact in the interface. Furthermore, a MSM photodetector using GaN on PSC buffer-layer was developed, and we found a very good photo/dark current ratio, thus evidenced the PSC indeed can help grow low leakage current and high quality GaN thin films on Si substrates.

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