本研究中，利用化學氣相沉積法成長不同結構之硫化鋅奈米線，並研究其陰極激發發光光譜(CL)，以及電性表現，最後組裝成奈米線電晶體。從結構開始，硫化鋅奈米線包含了兩種結構，一為Zincblende結構，另一為Wurtzite結構，由TEM影像及電子繞射圖可以清楚了解，Zincblende結構中含有雙晶結構(Twin)，其雙晶面為(111)面，成長方向沿著[111]方向，雙晶面兩側結晶面與雙晶面各呈現70.5∘的夾角，而Wurtzite結構中，奈米線沿著[0002]方向成長，為純單晶結構。由陰極激發發光光譜(CL)中，Zincblende結構主要的缺陷發光中心為自由載子在表面的缺陷能態(surface states)、自我激發的硫缺陷或是間隙晶格缺陷及與參雜元素相關之缺陷，而Wurtzite結構則有高缺陷密度與低缺陷密度，高缺陷密度主要缺陷發光中心的來源為硫的空缺、自我激發的硫缺陷或是間隙晶格缺陷及與參雜元素相關之缺陷，低缺陷密度則是以自由載子在表面缺陷能態及自我激發的硫缺陷或間隙晶格缺陷為主要發光中心。
奈米線元件是由FIB蒸鍍白金電極來製作，並經由快速退火300℃可以明顯改善電極品質及接觸性質；另外經由兩點與四點量測，我們可以萃取出奈米線本質的電阻率為0.302Ω-cm，接觸電阻率為0.032Ω-cm2，由四點量測可以完全避免接觸電阻對奈米線的影響。在低溫電性方面，呈現半導體性的Zincblende結構與Wurtzite結構，其個別的活化能為44.3meV及36meV，且在極低溫下(~2K)，導電性均呈現絕緣體，而在呈現金屬性的Wurtzite結構，其缺陷密度較高。在三點量測上，我們採取側向閘極與上閘極的方式來製作奈米線電晶體，由側向閘極與上閘極的比較，側向閘極下，奈米線為電洞(p-type)傳導；相較於上閘極，導電型態為硫化鋅奈米線常見的電子(n-type)導電。

In this research, Zinc Sulfide nanowires can be fabricated by conventional CVD process. The structures, CL emission spectrums and electrical properties of ZnS nanowires have been studied. Starting from the structures, two kinds of structures have been found in our results. One is Zincblende structure. The other one is Wurtzite structure. The Zincblende structure which contained lots of (111) twin planes with the nanowires growth direction in [111] direction and 70.5∘ twin plane angle can easily observed in TEM. The Wurtzite structure is a single crystalline structure which also can be confirmed by TEM analysis. In the CL spectrum, the defect emission centers in Zincblende structure are originated from surfaces states at nanowires surfaces, self-activated sulfur defects and impurity-related emission. As for Wurtzite structure, the defect emission centers in high defect density nanowires are originated from sulfur vacancy, self-activated sulfur defects and impurity-related emission. However, the defect emission centers in low defect density nanowires are originated from surface states and self-activated sulfur defects.
The nanodevices are fabricated by using FIB techniques. By further annealing process, the nanowires conductance could be enhanced because of the improvement of the Pt electrodes and contact properties. The two and four point measurement shows the nanowires resistivity is around 0.302Ω-cm and the contact resistivity is around 0.032Ω-cm2. In the temperature dependent resistance, both the Zincblende and Wurtzite structures show semiconductor behavior. Fitting the R-T plot by Arrhenius equation, we can obtain the activation energy. (44.3meV for Zincblende and 36meV for Wurtzite) At extremely low temperature region (~2K), the conduction types of Zincblende and Wurtzite structures both show insulator behavior. Also, the Wurtzite structure with the high defect density shows metallic behavior. In the 3-point measurement (gate structure), we fabricated the gate by using side gate and top gate. In the side gate structure, the nanowire conduction type is p-type. However, in the top gate structure, the nanowire conduction type is n-type.

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