本論文中首先探討不同深度圖案化基板(Pattern Sapphire Substrate , PSS)對發光二極體光電特性之影響，其中圖案化基板為圓錐狀，圓錐高度分別為1.2μm、1.4μm及1.7μm。從元件電性而言，平面基板LED(Conventional LED)與不同深度之PSS LED其順向導通電壓都約在3.8V左右，而逆向偏壓下不同深度之PSS LED相較於Conventional LED有較小的漏電流；在光性方面，深度為1.2μm、1.4μm及1.7μm之PSS LED與Conventional LED比較，其光輸出功率依序有著47.03%、51.49%與54.7%的提升。
　　其次將側壁蝕刻方式運用於不同深度之PSS LED，探討其光電特性。實驗所使用的蝕刻溶液是由磷酸與硫酸(2:3)混合調配，分別蝕刻5分鐘及20分鐘。在光特性方面，不同深度PSS LED經由側壁蝕刻5分鐘及20分鐘之光輸出功率皆比未經蝕刻之光輸出功率較高，提升約3%及8%的增加量。因此，我們結合圖案化基板與側壁蝕刻技術，可以得到光輸出功率有最大達68%的增加量。此外亦利用光學模擬軟體對這些結構進行模擬，而模擬的結果與實驗結果一致。

In the study, we first studied the electrical and optical characteristics of light emitting diode(LED) with different heights of cone shaped patterned sapphire substrate(PSS), which is cone-like shape. The heights of the cone-like shape are 1.2μm, 1.4μm and 1.7μm for the study. Adopting the PSS in LEDs, we achieved a smaller reverse leakage current due to the crystal quality improvement. Under 20mA current injection, the output powers are 5.94mW, 6.12mw and 6.25mW for the LEDs with PSS heights of 1.2μm, 1.4μm and 1.7μm, respectively. In other words, the 20mA-output powers of LEDs with 1.2μm, 1.4μm and 1.7μm heights cone shaped PSS could be improved by magnitude of approximately 47.03%, 51.49% and 54.7% respectively, compares with those of the conventional LED.
We demonstrated the also side-wall undercut on the LEDs with different heights of PSS. In our experiment, the etching solution was mixed by H3PO4 and H2SO4 (2:3), and etched LEDs for 5min and 20min. Under 20mA current injection, the LEDs with 5min and 20min undercut etching can be improved by magnitudes of approximately about 3% and 8%, respectively, compared with the non-etching LEDs. As a result, we could get 68% enhancement for combination of PSS and side-wall undercut techniques.

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