量子點雖然在現今已被廣泛利用在各項產品，但是其效率仍然可以改善，故本篇
論文利用熱活化延遲螢光材料(DDczTrz)摻雜到 CdSe/ZnS 量子點發光層，以及插入一 層 DDczTrz 於電洞傳輸層及量子點發光層之間，緊接者，藉由福斯特能量共振轉移
將激子能量傳遞給量子點發光層，最後，探討在傳統結構以及在改善後的元件效率和 亮度，甚至提高光子生命週期。
由於電子以及電洞注入速率不平衡而導致電性不理想，故本研究透過熱活化延遲 螢光材料來改善量子點發光二極體。第一部分透過二次轉速得到較平滑發光層，以及
不同旋轉塗布的轉速來改變發光層厚度，更進一步使用預轉是否改變其特性，最後得 到最大亮度 164,216 cd/m2，最高電流效率為 6.99 cd/A 以及最高能量效率 2.94 lm/W。
第二部分利用 DDczTrz 摻雜不同濃度到量子點發光層，以摻雜 3wt% DDczTrz 為最佳 參數，此外，當摻雜濃度越高，其發光層表面粗造度隨之降低，由上述可知，DDczTrz
得摻雜可以填補量子點發光層之缺陷，而最大亮度及電流效率改善至 528,293 cd/m2
和 26.3 cd/A，對大能量效率則是 11.46 lm/W。然而，摻雜容易造成能量在轉移時過於 接近，故有可能產生所謂的能量碰撞。第三部分插入一層很薄的 DDczTrz 薄膜於電
洞傳輸層及發光層之間，並改變其膜厚厚度以提高能量轉移之效率，最終，得到本實 驗最佳電特性，其最大亮度為 784,843 cd/m2，最高電流效率為 29.65 cd/A，而最高能
量效率為 14.46 lm/W。

In these days, there are many quantum dot applications, yet the efficiency of quantum dot can still be improved. Besides, quantum dot materials usually are heavy metal. Using the thermally activated delayed fluorescence luminescent materials (DDczTrz) to dope into CdSe/ZnS quantum dot emission layer and inserting a DDczTrz film between the hole transport layer and the emission layer, then the excitons energy are transferred to quantum dot by Förster resonance energy transfer. Finally, discuss the efficiency and luminance of traditional structure and improved srtructure.Because injection rate of electron and hole are unbalanced, electrical characteristics does not meet the experiment. Therefore, using thermally activated delayed fluorescence luminescent materials to improve quantum dot light-emitting diodes in this study. First of all, the first part uses two-step EML and changes thickness of emission layers through different spinning rate; furthermore, use pre-rotation whether change the characteristics. Then, the maximum luminance reaches 164,216 cd/m2, and the maximum current efficiency and power efficiency reaches 6.99 cd/A and 2.94 lm/W, respectively.
The second part is using different concentration DDczTrz to dope into quantum dot emission layer, and the doping 3w% DDcztrz is the optimal parameter; on top of that, as doping concentration increase, the surface roughness of emission layers decrease. As mentioned above, it can fill up the defects of emission layer by doping DDczTrz. Its maximum luminance and maximum current efficiency are improved to 528,293 cd/m2 and 26.3 cd/A respectively, and the maximum power efficiency is 11.46 lm/W. Nevertheless, it easily causes to be too close when the energy is transferred; consequently, it possibly causes the so-called collision of energy.The third part is inserting a thin DDczTrz film between the hole transport layer and the emission layer, and changing the thickness to enhance the efficiency of energy transfer. Finally, the best electrical characteristics are achieved in this experiment. Then maximum luminance is 784.843 cd/m2, and the maximum current efficiency and power efficiency is 29.65 cd/A and 14.46 lm/W.

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