本論文主要為利用MBE系統成長晶圓尺寸之超薄單晶氮化矽薄膜(β-Si3N4)，並於PECVD成長之非晶氮化矽(a-SiNx)與矽基板Si(111)之間加入超薄單晶氮化矽薄膜，藉由非晶氮化矽薄膜於真空破片(in situ cleaved)之切面(cross section)同步輻射光掃描式光電子能譜的量測，獲得薄膜原子間鍵結及組成資訊，並利用光致螢光光譜(PL)測量，我們發現超薄單晶氮化矽薄膜的加入能有效抑制PECVD成長非晶氮化矽時從矽基板所擴散之矽簇團(Si cluster)；並建立矽基板與非晶氮化矽異質接面之能帶結構。

The wafer scale epitaxial crystalline β-Si3N4 ultrathin film, grown by molecular beam epitaxy (MBE), was use as a template for dielectric amorphous silicon nitride (a-SiNx) growth on silicon substrate. Comparing the thick a-SiNx films (1 μm) grown by the plasma enhanced chemical vapor deposition (PECVD) with and without β-Si3N4 buffer layer, the effects of the crystalline matched template were studies by in situ cleaved scanning photoelectron microscopy/spectroscopy (SPEM/S) technique on their interfacial band structures and chemical compositions. In addition, the defect structures within the a-SiNx films were determined by using photoluminescence (PL) measurements. We found that the ultrathin β-Si3N4 buffer layer can effectively inhibit the Si cluster diffuse from silicon substrate while PECVD growth. The formation of silicon cluster in a-SiNx films would change the band alignment and bending of the a-SiNx/Si heterojunction.

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