在本論文中，我們研製並探討不同絕緣層對氧化銦鎵鋅(IGZO)薄膜電晶體之影響。第一部分的實驗中，我們分別使用100奈米、200奈米之五氧化二鉭(Ta2O5)與200奈米之二氧化矽(SiO2)做為無機材料之絕緣層用來製作氧化銦鎵鋅薄膜電晶體。三顆元件之次臨界擺幅分別為0.98、0.61、1.41V/dec。電子遷移率分別為20.59、61.5、8.18 cm2V-1s-1。電流開關比分別為13.6、105以及8.1x104。臨界電壓分別為-0.5、0.25以及1.6V。由於較低之漏電流以及較高之介電係數，以200奈米五氧化二鉭作為絕緣層之薄膜電晶體擁有較好之元件特性。
第二部分的實驗中，我們以旋轉塗佈之方法以有機PVP材料做為氧化銦鎵鋅薄膜電晶體之絕緣層。不同重量比例之PVP與交聯劑PMF(20:1、10:1與5:1)分別被使用做絕緣層。三顆元件之次臨界擺幅分別為0.53、0.69、1.09V/dec。電子遷移率分別為22.87、16.9、13.07 cm2V-1s-1。電流開關比分別為7.3x103、4x105以及1.7x102。臨界電壓分別為2、1.6以及1.9V。由於較平坦表面和較高的絕緣層電容值，使用PVP:PMF比例為20:1之絕緣層的元件擁有比較好之次臨界擺幅和電子遷移率。而使用PVP:PMF比例為10:1有較好之電流開關比。

In this thesis, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with different kinds of dielectric layers were fabricated and investigated. In the first part of our experiments, 100 nm and 200 nm Ta2O5 and 200 nm SiO2 thin films were used as inorganic dielectric layers for a-IGZO TFTs. The subthreshold swings (ss) of three devices were 0.98, 0.61 and 1.41 V/dec, respectively. The carrier mobilities were 20.59, 61.5, and 8.18 cm2V-1s-1 , respectively. On/off current ratios were 13.6, 105 and 8.1x104, respectively. The threshold voltages were -0.5, 0.25 and 1.6V, respectively. Because of the lower leakage current and higher κ value, a-IGZO TFT with a 200 nm Ta2O5 dielectric layer had better performances.
In the second part of our experiment, spin-coated organic PVP layers were used as dielectric layers for a-IGZO TFTs. Different weight ratio of PVP and cross-linking agent, PMF (i.e. 20:1, 10:1 and 5:1) were used in this work. The subthreshold swings (ss) of three devices were 0.53, 0.69 and 1.09 V/dec, respectively. The carrier mobilities were 22.87, 16.9, and 13.07 cm2V-1s-1. On/off current ratios were 7.3x103, 4x105 and 1.7x102, respectively. The threshold voltages were 2, 1.6 and 1.9V, respectively. The TFT with PVP: PMF ratio 20:1 has better ss and mobility because in TFT with PVP: PMF ratio 20:1, the PVP layer has the best surface roughness and higher capacitance. Moreover, it was found that the TFT with PVP: PMF ratio of 10:1 has better on/off ratio.

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