光激發光會產生消弭現象，是受環境參數所影響，當用來表現材料 Alq3 [ Tris ( 8-hydroxy quinoline ) aluminum ( Ⅲ ) ] 特性時，更能呈現材料的特徵性能。利用單一材料鍍層去獲得光激發光對參數變異，例如；承載基板、鍍層厚度、時間因素以及氧化受潮環境差異下之影響。
本實驗主要目的，在於因實驗環境影響之考量，需在材料特性以及蒸鍍條件變異時，探討鍍層薄膜的均勻性和分子排列堆疊方式，對元件光電效能影響做一探討。
製作單異質界面雙層結構元件，因蒸鍍參數變異之由，使得元件之電特性產生變化而加以探究，參數設定在可進行蒸鍍之真空下，當電洞傳送層 NPB 材料厚度 400 Å 、電子傳送層 Alq3 材料厚度 300 Å 之組合，蒸鍍速率控制在 ~2 Å/s 以及鍍層界面加溫控制在 60℃ ，時間 20 min 所製成之元件，有較佳的電特性效果顯現。

Photoluminescence quenching of Alq3 [Tris ( 8-hydroxy quinoline ) aluminum (Ⅲ)] is seriously affected by many parameters including substrate material, layer thickness, storage time, and humidity et al. In this study, we have demonstrated device performance affected by film uniformity, atomic arrangement, material characteristics, and evaporation parameters. The optimal evaporation rate is 2 Å/s, and substrate heated at 60°C for 20 min when interface between deposited layers, and the thickness of NPB layer and Alq3 layer in the single hetero-junction device are 400 Å and 300 Å respectively.

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