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研究生： 鄧允斌
Teng, Yun-pin
論文名稱： 射頻磁控濺鍍ZnO: Bi, Ag, Mg薄膜之特性研究
Characteristic of ZnO:Bi,Ag,Mg Thin Films by RF Magnetron Sputter
指導教授： 張炎輝
Chang, Yen-hwei
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2008
畢業學年度： 96
語文別： 中文
論文頁數： 117
中文關鍵詞： 濺鍍 、氧化鋅
外文關鍵詞： sputter, zinc oxide
相關次數： 點閱：96  下載：1 
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    • 本實驗利用VA族元素Bi掺雜於ZnO，以磁控濺鍍系統沉積薄膜於藍寶石基板上，搭配適當溫度的熱處理後量測其性質。發現在熱處理後的ZnO:Bi薄膜電阻率會隨溫度上升而下降。在同樣的熱處理溫度下，隨掺雜量的增加其電阻上升，所有掺雜Bi的ZnO薄膜皆為n型電性，經由實驗證據顯示，Bi並沒有取代Zn位置，而是取代了O的位置。
    本實驗另一階段乃利用Ag掺雜Mg0.1Zn0.9O，期望得到p型電性的Mg0.1Zn0.9O。發現在600°C下熱處理後的Mg0.1Zn0.9O:Ag薄膜之電性由n型轉變成為p型，電阻也同時大幅上升，是因為Ag在熱處理的過程中氧化態增加。隨著熱處理溫度繼續升高，Ag的氧化態也會減少，使薄膜的電阻下降，但薄膜仍為p型電性。

    Bismuth doped zinc oxide and silver/magnesium co-doped zinc oxide thin films on C-plane sapphire have been prepared by rf magnetron sputter system. The ceramic targets with different dopant weight and mole percentage were used. Films were post-annealed in vacuum with varied temperature. As annealing temperature raised, the resistivity of ZnO:Bi thin films reduced. Heat treatment at same temperature, the resistivity of ZnO:Bi thin films increased with higher dopant. But all films exhibit n-type conductivity. Results show that bismuth ion did not substitute for zinc ion ,but oxygen ion.
    For silver/magnesium co-doped zinc oxide films, it was found when annealed at temperature above 600°C, the conductivity of MgZnO:Ag converted n-type to p-type, resistivity raised greatly in the same time. It is because oxidation state of silver icreased by heat treatment. The oxidation state of silver and resistivity of MgZnO:Ag reduced with heat treated temperature increased continually, but the conductivity of films is p-type still.

    總目錄 摘要 ......................I Abstract ..................II 總目錄............ ........III 表目錄.....................VI 圖目錄.....................VII 第一章 緒論..............1 1-1 前言...................1 1-2 氧化鋅簡介.............1 1-4 氧化鋅之備製...........4 1-5 實驗動機與目的......... 6 第二章 文獻回顧...........11 2-1 P型氧化鋅之發展........11 2-2 其他VA族元素之掺雜.....12 2-3 其他元素之掺雜 .........14 第三章 實驗方法與儀器.....16 3-1 實驗材料準備...........16 3-1-1 基板.................16 3-1-2 靶材.................16 3-2 實驗流程...............17 3-2-1 實驗參數.............18 3-3 真空濺鍍系統...........19 3-4 快速熱退火系統.........19 3-5 量測系統...............20 3-5-1 X光繞射分析..........20 3-5-2 電性量測.............21 3-5-2 光學量測.............23 3-5-3 膜厚量測.............24 3-5-4 成份分析.............24 3-5-5 表面型態觀察 .........25 第四章 結果與討論.........37 4-1 結構分析.........................37 4-1-1 製程參數對鍍層結構之影響.......37 4-1-2 掺雜量對鍍層結構之影響.........39 4-1-3 熱處理對鍍層結構之影響.........42 4-2 ZnO薄膜的厚度....................56 4-2-1 掺雜量的影響...................56 4-2-2 Ar/O2流量比的影響..............57 4-2-3 濺鍍功率的影響.................57 4-3 表面型態分析.....................62 4-3-1 Ar/O2流量比對表面形態的影響....62 4-3-2 掺雜量對表面形態的影響.........62 4-3-3 濺鍍功率對表面形態的影響.......63 4-3-4 AFM表面觀察....................64 4-4 成份分析.........................76 4-4-1 EDS分析........................76 4-4-2 XPS分析........................77 4-5 電性分析.........................84 4-5-1 Bi掺雜對電性的影響.............84 4-5-2 Ag與Mg掺雜對電性的影響.........85 4-6 光學性質.........................92 4-6-1 UV-VIAS 量測...................92 4-6-1-1 Ar/O2流量比對穿透率的影響....92 4-6-1-2 掺雜量對穿透率的影響.........93 4-6-1-3 熱處理對穿透率的影響.........94 4-6-1-4 能隙變化.....................95 4-6-2 PL 量測........................96 第五章 結論........................108 參考文獻............................109 致謝................................116

    1. H. L. Hartnagel, A. K. Jain, and C. Jagadish, "Semiconducting Transparent Thin Films", published by Institute of Physics Publication, 1995.
    2. T. Yamamoto, H. K. Yoshida, Japanese Journal of Applied Physics, 38(1999), L166.
    3. R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, and K. A. Jones, Applied Physics Letters, 73(1998), 348.
    4.張益新「 銅製程矽晶片上ZnO 薄膜合成之研究」。國立成功大學材料科學及工程學系碩士論文。1999 年。
    5. F. S. Hickernell, Journal of Applied Physics, 44(1973), 1061.
    6. K. H. Yoon, J. W. Choi, and D. H. Lee, Thin Solid Films, 302 (1997), 116.
    7. J. S. Kim, H. A. Marzouk, and P. J. Rrucroft, Thin Solid Films, 217(1992), 133
    8. A. E. Shaer, A. C. Mofor, A. Bakin, M. Kreye, A. Waag, Superlattices and Microstructures, 38 (2005), 265
    9. N. J. Ianno, L. McConville, N. Shaikh, S. Pittal and P.G. Snyder, Thin Solid Films, 220(1992), 92.
    10. S. Major, A. Banerjee, and K. L. Chopra, Thin Solid Films, 108 (1983), 333.
    11. W. S. Law, S. J. Fonash, Journal of Electron Material, 16(1987), 141.
    12. T. Okamura, Y. Seki, S. Nagakari, and H. Okushi, Japanese Journal of Applied Physics, 31 (1992), L762.
    13. J. Lim, K. Shin, H. Kim, and C. Lee, Thin Solid Films, 475(2005), 256.
    14. S. B. Zhang, S. H. Wei, and A. Zunger, Journal of Applied Physics, 83(1998), 3192.
    15. C. Wang, Z. Ji, J. Xi, J. Du, and Z. Ye, Materials Letters, 60(2006), 912.
    16. J. G. Lu, S. Fujita, T. Kawaharamura, and H. Nishinaka, Chemical Physics Letters, 441(2007), 68.
    17. T. H. Vlasenflin, M. Tanaka, Solid State Communications, 142(2007), 292.
    18. J. Jiang, L. P. Zhu , J. R. Wang, X. Q. Gu, X. H. Pan, Y. J. Zeng, and Z. Z. Ye , Materials Letters, 62(2008), 536.
    19. Y. J. Zeng, Z. Z. Ye, W. Z. Xu, B. Liu, Y. Che, L. P. Zhu, and B. H. Zhao, Materials Letters, 61(2007), 41.
    20. R. Ding, H. Zhu, and Q. Zeng, Vacuum, 82(2008), 510.
    21. Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Jeong, and H. W. White, Journal of Crystal Growth, 216(2000), 330.
    22. E. C. Lee, K. J. Chang, Physica B, 376–377(2006), 707.
    23. D. C. Look, R. L. Jones, J. R. Sizelove, N. Y. Garces, N. C. Giles, and L. E. Halliburton, Physics Status Solidi A, 195(2003), 171.
    24. Y. Yan, M. M. Al-Jassim, and S. H. Wei, Applied Physics Letters, 89(2006), 181912.
    25. J. G. Lu, L. P. ZhU, Z. Z. Ye, Y. J. Zeng, and F. zhuge, Journal of Crystal Growth, 274(2005), 425.
    26. D. P. Norton, Y. W. Heo, M. P. Ivill, K. Ip, S. J. Pearton, Material Today, 7(2004), 34.
    27. A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, Applied Physics Letters, 75(1999), 3327.
    28. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, Applied Physics Letters, 72(1998), 2466.
    29. T. Minemoto, T. Negami, S. Nishiwaki, H. Takakura, Thin Solid Films, 372(2000), 173.
    30. J. Narayan, A. K. Sharma, A. Kvit, C. Jin, Solid State Commun. , 121(2001), 9.
    31. A. Kobayashi, O. F. Sankey, J. D. Dow, Physical Review B, 28(1983), 946.
    32. Y. Sato, S. Sato, Thin Solid Film, 281-282(1996), 445.
    33. A. V. Singh , R. M. Mehra, A. Wakahara , A. Yoshida , Journal of Applied Physics, 93(2003), 396.
    34. D. C. Look , D. C. Reynolds , C. W. Litton , R. L. Jones , D. B. Eason , G. Cantwell , Applied Physics Letters, 81(2002), 1830.
    35. X. L. Guo, H. Tabata, T. Kawai, Optical Materials, 19(2002), 229.
    36. Z. G. Yu, P. Wu, H. Gong, Applied Physics Letters, 88(2006), 132114.
    37. Z. Z. Ye, F. Z. Ge, J. G. Lu, Z. H. Zhang, L. P. Zhu, B. H. Zhao, J. Y. Huang, Journal of Crystal Growth, 265(2004), 127.
    38. M. Joseph, H. Tabata, T. Kawai, Japanese Journal of Applied Physics, 38(1999), L1205.
    39. K. Nakhara , H. Takasu, P. Fons, A. Yamada, K. Iwata, K. Matsubara, R. Hunger, S. Niki , Applied Physics Letters, 79(2001), 4139.
    40. A. Tsukazaki , H. Saito , K. Tamura , M. Ohtani , H. Koinuma , M. Sumiya , S. Fuke , T. Fukumura , M. Kawasaki , Applied Physics Letters, 81(2002), 235.
    41. K. Tamura , T. Makino , A. Tsukazaki , M. Sumiya , S. Fuke , T. Furumochi , M. Lippmaa , C. H. Chia , Y. Segawa , H. Koinuma , M. Kawasaki , Solid State Commun, 127(2003), 265.
    42. A. B. M. A. Ashrafi, I. Suemune, H. Kumano, S. Tanaka, Japanese Journal of Applied Physics, 41(2002), L1281.
    43. E. Kaminska , A. Piotrowska , J. Kossut , R. Butkute , W. Dobrowolski , R. Lukasiewicz , A. Barcz , R. Jakiela , E. Dynowska , E. Przezdziecka , M. Aleszkiewicz , P. Wojnar , E. Kowalczyk , Physica Status Solidi C, 2[3](2005), 1119.
    44. E. Kaminska , A. Piotrowska , J. Kossut , A. Barcz , R. Butkute , W. Dobrowolski , E. Dynowska , R. Jakiela , E. Przezdziecka , R. Lukasiewicz , M. Aleszkiewicz , P. Wojnar , E. Kowalczyk , Solid State Commun., 135(2005), 11.
    45. 楊明輝"透明導電膜", 藝軒出版社。
    46. C. H. Park, S. B. Zhang, S. H. Wei, Physical Review B, 66(2002), 073202.
    47. K. K. Kim, H. S. Kim , D. K. Hwang , J. H. Lim , S. J. Park , Applied Physics Letters, 83(2003), 63.
    48. V. Vaithianathan, B. T. Lee, S. S. Kim, Journal of Applied Physics, 98(2005), 043519.
    49. Y. J. Li, Y. W. Heo, Y. Kwon, K. Ip, S. J. Pearton, D. P. Norton, Applied Physics Letters, 87(2005), 072101.
    50. B. Claflin, D. C. Look, S. J. Park, G. Cantwell, Journal of Crystal Growth, 287(2006), 16.
    51. Y. R. Ryu, T. S. Lee, H. W. White, Applied Physics Letters, 83(2003), 87.
    52. D. C. Look, G. M. Renlund, R. H. BurgenerII, J. R. Sizelove, Applied Physics Letters, 85(2004), 5269.
    53. T. S. Jeong, M. S. Han, C. J. Youn, Y. S. Park, Journal of Applied Physics, 96(2004), 175.
    54. G. Braunstein, A. Muraviev, H. Saxena, N. Dhere, V. Richter, R. Kalish, Applied Physics Letters, 87(2005), 192103.
    55. F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, W. P. Beyermann, Applied Physics Letters, 87(2005), 152101.
    56. T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, Y. Hatanaka, Physica Status Solidi B, 229(2002), 911.
    57. K. Ohara, T. Seino, A. Nakamura, T. Aoki, H. Kominami, Y. Nakanishi, Y. Hatanaka, Applied Surface Science, 244(2005), 369.
    58. T. M. Borseth, J. S. Christensen, K. Maknys, A. Hallen, B. G. Svensson, A. Y. Kuznetsov, Superlattices and Microstructures, 38(2005), 464.
    59. 游力蓁「掺雜銻於以射頻電漿沉積之氧化鋅透明導電膜光電特性研究」。國立成功大學微電子工程研究所碩士論文。2005年6月。
    60. J. -R. Duclère, R. O'haire, A. Meaney, K. Johnston, I. Reid, G. Tobin, J. -P. Mosnier, M. Guilloux-Viry, E. Mcglynn, M. O. Henry, Journal of Materials Science: Materials in Electronics, 16 (2005), 421.
    61. D. C. Look, B. Claflin, Y. I. Alivov, S. J. Park, ibdi., 10(2004), 2203.
    62. F. X. Xiu, L. J. Mandalapu, Z. Yang, J. L. Liu, Applied Physics Letters, 89(2006), 052103.
    63. H. S. Kang, B. D. Ahn, J. H. Kim, G. H. Kim, S. H. Lim, H. W. Chang, and S. Y. Lee, Applied Physics Letters, 88(2006), 202108.
    64. L. Duan, W. Gao, R. Chen, Z. Fu, Solid State Communications, 145 (2008), 479.
    65. X. Zhang, H. Ma, J. Ma, F. Zong, H. Xiao, F. Ji, Physica B, 357 (2005), 428.
    66. A. El-Shaer, A. Bakina, M. Al-Suleimana, S. Ivanovb, A. Che Mofor,
    A. Waaga, Superlattices and Microstructures, 42(2007), 129.
    67. C. H. Choi, S. H. Kim, Journal of Crystal Growth, 283(2005), 170.
    68. Y. J. Li, Y. W. Heo, Y. Kwon, K. Ip, S. J. Pearton, D. P. Norton, Applied Physics Letters, 87(2005), 072101.
    69. 戴振益「[Fe3O4/ZnO]n多層膜及退火膜結構與磁性之研究」。國立成功大學物理研究所碩士論文。2004 年 7 月。
    70. 汪建民「材料分析」。 民全書局。1998年10月。
    71. 陳漢賓「同時掺雜鋁、氟之氧化鋅透明導電薄膜性質之研究」。私立義守大學材料科學與工程學系碩士論文。2007年7月。
    72. 謝宗琳「紫外光發光二極體設計製作」 。中華技術學院電子工程研究所碩士論文。2004年。
    73. Y. M. Ye, Z. Z. Ye, L. L. Chen, B. H. Zhao, L. P. Zhu, Applied Surface Science, 253(2006), 2345.
    74. K. Ogata, K. Koike, T. Tanite, T. Komuro, F. Yan, S. Sasa, M. Inoue, M. Yano, Journal of Crystal Growth, 251(2003), 623.
    75. J. Zhang, F. Pan, W. Hao, T. Wang, Materials Science and Engineering B, 129(2006), 93.
    76. A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov, A. Che Mofor, A. Waag, Superlattices and Microstructures, 42(2007), 129.
    77. 楊義發, 龍華, 陽光, 戴能利, 鄭啟光, 陸培祥, Chinese journal of lasers, 0258-7025(2007)09-1282-05.
    78. Q. Liu, C. L. Yuan, and C. L. Gan, Journal of Applied Physics, 101(2007), 073902.
    79. Z. Q. Ma, W. G. Zhao, Y. Wang, Thin Solid Films, 515(2007), 8611.
    80. D. R. Sahu, Microelectronics Journal, 38(2007), 1252.
    81. 陳靖允「CuInSe2特性研究及CuGaSe2奈米粉體之合成」。國立中山大學材料科學研究所碩士論文。2006年。
    82. W. D.,Westwood, J. Vac. Sci. Techl. (1978)
    83. Data from National Physical Laboratory (NPL), "Ar Sputtering Yield at 0°" (2005)
    84. O. Schmidt, A. Geis, P. Kiesel, N. Johnson, A. Waag, and G. Döhler, "Evidence for an electrically conductiing llayer at the natiive ziinc oxiide surface", Palo Alto Research center(PARC) (2005)
    85. C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder, G. E. Mulienberg, ”Handbook of X-Ray Photoelecton Spectroscopy” Perkin-Elmer Corporation Physical Electronics Division 6509 Flying Cloud Drive Eden Prairie, Minnesota 55344.
    86. S. Tiwari, Sanjay Tiwari, Solar Energy Materials & Solar Cells, 90 (2006), 1621.
    87. E. V. Tolstobrov, V. P. Tolstoi, and I. V. Murin, Russian Journal of General Chemistry, 71(2001), 437. Translated from Zhurnal Obshchei Khimii, 71(2001), 639.
    88. 賈維國「鈦酸鉍薄膜之備製及其鐵電特性之研究」。國立中山大學電機工程學系博士論文。2006年。
    89. L. Leontie, M. Caraman, A. Visinoiu, G.I. Rusu, Thin Solid Films, 473(2005), 230.
    90. W. Liu, S. Gu, S. Zhu, J. Ye, F. Qin, S. Liu, X. Zhou, L. Hu, R. Zhang, Y. Shi, Y. Zheng, Journal of Crystal Growth, 277(2005), 416.
    91. T. B. Massalski, Binary Alloy Phase Diagrams, American Society for Matals, Vol. 1, 1986.

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